Rare-Earth Plasma Coating With Balanced Compressive Stress
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Solution Overview
Problem
Existing components for plasma processing apparatuses face challenges in maintaining high bonding strength to substrates over long periods, especially under repeated temperature fluctuations, due to issues with pore formation and stress anisotropy in films like Y2O3 formed by thermal spraying.
Innovation Solution
A component for a plasma processing apparatus is designed with a substrate coated by a film of an oxide, fluoride, oxyfluoride, or nitride of a rare earth element, where the compressive stress ratio σ22/σ11 across the film's surface is 5 or less, ensuring balanced stress distribution and preventing anisotropy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a film of oxide, fluoride, oxyfluoride, or nitride of rare earth element is formed on a substrate for plasma processing, then the component can withstand plasma exposure and maintain structural integrity, but the film may develop anisotropic compressive stress (σ22/σ11 > 5) leading to reduced bonding strength over time
Solution Approach 1:
The patent applies parameter changes by controlling the compressive stress ratio σ22/σ11 to be 5 or less through film formation process optimization. This parameter control ensures balanced stress distribution in the film, preventing anisotropic stress development that would otherwise lead to delamination and bonding strength degradation during plasma processing operations.
2Reliability
If the compressive stress ratio σ22/σ11 in the film is kept at 5 or less, then bonding strength to substrate is maintained over long periods, but the film formation process becomes more complex requiring precise stress control
Solution Approach 1:
The patent manages device complexity by establishing a clear quantitative criterion (σ22/σ11 ≤ 5) for acceptable stress distribution. This parameter-based approach provides a straightforward control target for the film formation process, enabling manufacturers to maintain bonding strength without requiring overly complex process control systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the component's durability and reliability by maintaining strong bonding to the substrate over time, reducing particle contamination, and withstanding internal tensile stress, thus improving the overall performance of the plasma processing apparatus.
Implementation Method 1
A ratio σ22/σ11 of a compressive stress σ11 to occur across a surface of the film to be exposed to plasma and a compressive stress σ22 to occur across the surface in a direction perpendicular to the compressive stress σ11 is 5 or less
Data Source
AI summary
A component for a plasma processing apparatus includes a substrate and a film on at least a part of the substrate. The film includes an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element. A ratio σ22/σ11 of a compressive stress σ11 to occur across a surface of the film to be exposed to plasma and a compressive stress σ22 to occur across the surface in a direction perpendicular to the compressive stress σ11 is 5 or less. A plasma processing apparatus includes the above component.