Plasma Chamber Coil Control for Uniform Sheath Boundary Density
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Solution Overview
Problem
Existing plasma processing devices struggle to uniformly control plasma distribution in a chamber space, leading to non-uniform process results on semiconductor substrates.
Innovation Solution
The plasma processing device employs a magnetic field control device with coils to form a magnetic field, controlling plasma density by generating magnetic resonance in the central portion of the chamber space, enhancing plasma generation efficiency and uniformity of process distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a magnetic field control device with coils is introduced to control plasma density, then plasma distribution uniformity is improved, but device complexity increases
Solution Approach 1:
The magnetic field control device is divided into multiple independent coils (first coil, second coil, third coil, fourth coil) arranged at different positions around the chamber. Each coil can be controlled independently to generate magnetic fields in specific regions, allowing precise control of plasma density distribution across different areas of the substrate without requiring a single complex magnetic field system
Solution Approach 2:
Different coils are configured to create localized magnetic fields targeting specific regions of the chamber. The first and second coils control plasma density in radial directions, while the third and fourth coils control plasma density in axial directions. This local quality approach allows each coil to optimize plasma distribution in its specific zone, achieving overall uniformity through coordinated local control
2Productivity
If magnetic resonance is generated in the central portion to enhance plasma generation efficiency, then productivity is improved, but device complexity increases
Solution Approach 1:
The system generates magnetic resonance by applying high-frequency power to the coils at specific frequencies that resonate with the plasma in the central portion of the chamber. This resonance effect enhances plasma generation efficiency and electron heating in the central region, improving productivity without requiring fundamental changes to the device structure
Solution Approach 2:
The control unit dynamically adjusts parameters such as coil current, frequency, and phase to optimize magnetic resonance conditions in the central portion. By changing these parameters, the system can enhance plasma generation efficiency under different process conditions while using the same physical device structure
3Adaptability or versatility
If multiple high-frequency power supplies are used to excite process gas, then plasma density control flexibility is improved, but device complexity increases
Solution Approach 1:
The multiple high-frequency power supplies serve multiple functions: they can operate independently to generate plasma in different regions, work in combination to create complex plasma patterns, and adjust their output to control plasma density, temperature, and chemistry. This multi-functionality provides versatile plasma density control without requiring separate dedicated systems for each function
Solution Approach 2:
The system dynamically adjusts the power levels, frequencies, and phases of the multiple high-frequency power supplies based on real-time process conditions and control objectives. This dynamic control allows flexible adaptation to different plasma density requirements while using a unified power supply architecture rather than multiple fixed-function systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for improved control of plasma density and process distribution, ensuring uniformity of semiconductor manufacturing results across the substrate, expanding the control range and enhancing process outcomes in the central portion.
Implementation Method 1
a magnetic field control device including at least one coil located above the upper electrode, wherein the magnetic field control device is configured to form a magnetic field in the chamber space using at least one current flowing through the at least one coil
Implementation Method 2
controlling plasma density by generating magnetic resonance in the central portion of the chamber space
Implementation Method 3
at least one of the first high-frequency power or the second high-frequency power excites a process gas supplied to the chamber space to form a bulk plasma region and a sheath region in the chamber space
Data Source
AI summary
A plasma processing device includes an electrostatic chuck supporting a substrate in a chamber space; an upper electrode located in an upper portion of a chamber body; a magnetic field control device including at least one coil located above the upper electrode and forming a magnetic field in the chamber space; and a control unit controlling at least one current flowing through the at least one coil such that a magnetic flux density at a target position on a boundary of the sheath region has a value in which an electronic rotation period at the target position due to the magnetic field matches an electronic oscillation period determined by at least one of a first high-frequency power source and a second high-frequency power source.