Plasma Control Plate Layout for Electron-Only Substrate Processing

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Solution Overview

Problem

Conventional substrate processing methods using plasma cause damage to substrates due to ion collisions, especially as device line widths miniaturize, degrading device performance.

Innovation Solution

A substrate processing apparatus and method utilizing a chamber with partitioned plasma control plates and controlled voltage application to selectively direct electrons for processing, minimizing substrate damage and enabling atomic thickness processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If ion particles in plasma are used to process the substrate, then the substrate can be processed, but the substrate may be damaged and processed in a shape different from the originally intended processing shape

Engineering Contradiction:

Improvesubstrate processing capabilityVSAvoidprocessing shape accuracy

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The invention extracts and separates electrons from ions in the plasma, using only electrons for substrate processing while excluding ions. This is achieved by applying a negative bias voltage to the substrate to repel ions and a positive bias voltage to attract electrons, thereby eliminating ion-induced damage while maintaining processing capability

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The invention changes the electrical parameters (bias voltages) applied to the substrate to selectively control which plasma components (electrons vs. ions) interact with the substrate. By adjusting the substrate bias voltage to be positive, the system transforms the substrate-plasma interaction from ion-dominated to electron-dominated, resolving the contradiction between processing efficiency and precision

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If the line width of a device is miniaturized to improve device properties, then device performance is improved, but substrate damage degrades the device property

Engineering Contradiction:

Improveline width miniaturizationVSAvoidsubstrate damage

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The invention converts the typically harmful ion component of plasma into a beneficial or neutral element by repelling it from the substrate. The negative bias voltage applied to the substrate during plasma processing redirects ions away from the substrate surface, transforming what would be a damaging factor into a controlled parameter that protects the miniaturized device structures

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Ease of manufacture

If plasma is used for etching or deposition processes, then the substrate can be processed, but ion collisions cause damage to the substrate

Engineering Contradiction:

Improveetching and deposition capabilityVSAvoidion collision damage

Core Design Contradiction:

Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The invention segments the plasma components into separate functional roles: electrons are directed toward the substrate for beneficial processing (etching/deposition), while ions are repelled or directed away from the substrate. This segmentation is achieved through electric field control using biased electrodes, allowing selective utilization of plasma components to maintain manufacturing capability while eliminating harmful effects

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise, damage-minimized processing of substrates at atomic thickness using electrons, suitable for large-area substrates, without the structural issues caused by ion-based methods.

Implementation Method 1

a plasma control power source connected to the first plasma control plate and the second plasma control plate

Methodology Applied

Scientific EffectElectric field: Electric Field

Implementation Method 2

Plasma is generated by a very high temperature, a strong electric field, or a high-frequency electromagnetic field (RF electromagnetic fields), and refers to an ionized gas state composed of ions, electrons, radicals, and the like

Methodology Applied

Scientific EffectPlasma generation: Plasma

Data Source

PatentUS12406834B2Substrate processing apparatus and substrate processing method

Publication Date: 2025.09.02 INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY

AI summary

The present invention relates to a substrate processing apparatus and a substrate processing method. A substrate processing apparatus according to an embodiment of the present invention includes a chamber; a susceptor located inside the chamber to support a substrate to be processed; a first plasma control plate located in an upper area of a space inside the chamber; a second plasma control plate located below the first plasma control plate while being spaced apart from the first plasma control plate by a predetermined distance; and a plasma control power source connected to the first plasma control plate and the second plasma control plate.