Plasma Control Apparatus with Segmented Electrodes for Uniform Deposition
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Solution Overview
Problem
In semiconductor manufacturing, controlling plasma characteristics for uniform thin film deposition is challenging, especially in varying facility environments, where precise control of plasma distribution and deposition rates across different regions of a substrate is difficult to achieve.
Innovation Solution
A plasma processing system with a substrate stage featuring a circular electrode and an annular electrode, along with capacitance variators and sensors, allows for real-time control of plasma characteristics by adjusting capacitance based on electrical signal data to achieve uniform thin film profiles across different regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma control methods are used, then the system is simple to operate, but manufacturing precision of thin film uniformity deteriorates
Solution Approach 1:
The substrate stage electrode is segmented into multiple independent regions (central circular electrode, intermediate annular electrode, outer annular electrode) that can be controlled separately. Each electrode region has independent capacitance control, allowing different plasma parameters to be applied to different areas of the substrate, thereby achieving uniform thin film deposition across the entire substrate surface.
Solution Approach 2:
Different regions of the substrate stage are assigned different electrode structures with distinct capacitance characteristics. The central region, intermediate region, and outer region each have tailored electrode configurations that optimize plasma distribution locally, enabling precise control of deposition rates and film properties in each zone to achieve overall uniformity.
2Manufacturing precision
If real-time plasma control is implemented, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The system incorporates sensors that detect plasma parameters (such as impedance, power, or other electrical characteristics) in real-time and feed this information back to the control system. The controller adjusts the capacitance of each electrode region based on the feedback signals, creating a closed-loop control system that maintains precise deposition rates despite variations in process conditions or environmental factors.
Solution Approach 2:
The capacitance values of the electrode regions are made dynamically adjustable during the deposition process. Rather than fixed parameters, the system can modify capacitance in real-time based on process requirements and feedback measurements, enabling adaptive control of plasma distribution and deposition characteristics throughout the process.
3Adaptability or versatility
If multiple electrodes with independent control are used, then adaptability to environmental changes improves, but ease of operation deteriorates
Solution Approach 1:
The controller is designed to manage multiple electrode regions through a unified interface, consolidating the control of several capacitance variators into a single system. This multi-functional controller can adjust all electrode regions simultaneously or independently based on a single set of process parameters, maintaining ease of operation while providing comprehensive adaptability to environmental changes through centralized management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This system enables precise control of plasma characteristics, ensuring uniform deposition processes and active response to environmental changes, resulting in consistent thin film quality across the substrate.
Implementation Method 1
a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal
Implementation Method 2
a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode
Implementation Method 3
a chamber providing a space for performing a plasma process on a substrate
Implementation Method 4
a plasma process on a substrate
Data Source
AI summary
a plasma processing system includes a chamber providing a space for performing a plasma process on a substrate, a substrate stage having a seating surface for supporting the substrate, the substrate stage having a circular electrode and at least one annular electrode therein, an upper electrode provided over the substrate, a power supply configured to supply source power to the upper electrode, a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal, a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode, and a controller configured to determine a thin film profile in first and second regions of the substrate corresponding to the circular electrode and the annular electrode respectively based on the electrical signal data obtained from the sensor, the controller being configured to output the first and second control signals respectively in order to obtain a desired thin film profile.