Plasma Process Cooling Gas Circulation for Temperature Control
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Solution Overview
Problem
Conventional plasma process apparatuses for film forming at low temperatures face issues with temperature control, leading to increased process temperatures and reduced reproducibility due to heat accumulation, and frequent cleaning is required to manage film deposition on the inner walls.
Innovation Solution
A plasma process apparatus with a cylindrical processing container, a shield cover, and a cooling device that circulates cooling gas between the shield cover and the processing container to maintain low temperatures and reduce film deposition, along with a thermometry unit and valve device to control the plasma process and minimize unnecessary film peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma process is performed in conventional apparatus without cooling device, then film forming process can be conducted, but temperature increases during batch processes leading to poor reproducibility
Solution Approach 1:
A cooling device is introduced as an intermediary component between the plasma generation system and the processing container. The cooling device circulates cooling gas through channels formed in the processing container wall, acting as a thermal mediator that removes excess heat from the plasma process while allowing the plasma process to continue. This resolves the contradiction by adding a thermal management layer that prevents temperature accumulation.
Solution Approach 2:
The invention changes the thermal parameters of the processing system by introducing active cooling. The processing container is designed with internal cooling channels that allow cooling gas to flow through, changing the temperature parameter from uncontrolled (increasing during batch processes) to controlled (maintained at desired levels). This parameter change enables reproducible low-temperature plasma processing.
2Reliability
If plasma process is performed at low temperature to form sacrificial oxide layers, then heat resistance requirements are met, but unnecessary film deposition occurs on container walls leading to frequent cleaning
Solution Approach 1:
The cooling channels are strategically positioned in specific regions of the processing container where film deposition is most problematic. By applying cooling locally to the container walls rather than uniformly throughout, the invention prevents film deposition in critical areas while maintaining the overall low-temperature plasma process. This local quality approach reduces cleaning frequency without compromising film quality.
Solution Approach 2:
The cooling device operates continuously or preemptively during the plasma process to prevent film deposition before it occurs on the container walls. By maintaining cool temperatures in advance and throughout the process, the invention prevents the formation of unnecessary films that would otherwise require frequent cleaning, thereby improving productivity.
3Productivity
If conventional plasma apparatus is used for batch processing, then multiple wafers can be processed, but temperature accumulation occurs leading to inefficient film formation
Solution Approach 1:
The cooling device serves as a thermal intermediary that enables batch processing by continuously removing heat accumulated during multiple wafer processing cycles. The cooling gas circulation system acts as a mediator between the plasma generation and the container structure, allowing efficient heat transfer that maintains optimal processing conditions throughout the batch process, thereby improving film formation efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution maintains low process temperatures, enhancing reproducibility and reducing the frequency of cleaning, thereby improving throughput and maintaining stable film forming processes.
Implementation Method 1
a cooling device configured to cause the cooling gas to flow through a space between the cylindrical shield cover and the cylindrical processing container during the plasma process
Implementation Method 2
an activating unit configured to be located along a longitudinal direction of the processing container and to activate the gas by plasma generated by a high frequency power
Data Source
AI summary
A plasma process method of processing an object to be processed by a plasma process while enabling cooling of an inside of a plasma apparatus by taking in and exhausting a gas to evacuate an atmosphere of the inside includes measuring a temperature of the atmosphere of the inside of the plasma process apparatus while the plasma is not generated; and stopping taking the gas into the inside of the plasma process apparatus during the plasma process in a case where the measured temperature is lower than a first preset threshold temperature when the atmosphere is evacuated at a preset volumetric flow rate.