Plasma Cutting Semiconductor Substrates with Passivation Protection
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Solution Overview
Problem
Existing methods for singulating semiconductor chips struggle to efficiently separate thin semiconductor chips without damaging the metal interconnections, leading to incomplete separation and potential failure in the singulation process.
Innovation Solution
A method involving the formation of a passivation layer on the substrate, followed by the creation of a self-assembled monolayer and plasma cutting in the scribe lane region to form a recess, which is terminated before reaching the metal interconnection, allowing for subsequent tensile force application to sever the connection without particle production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma cutting is used to separate semiconductor chips, then cutting efficiency is improved, but metal interconnections may be damaged causing particle formation
Solution Approach 1:
A passivation layer is formed over the metal interconnections before plasma cutting. This preliminary protective action prevents the plasma from directly contacting and damaging the metal interconnections, thereby eliminating particle formation while maintaining high cutting efficiency
Solution Approach 2:
The passivation layer acts as an intermediary barrier between the plasma cutting tool and the metal interconnections. It allows the plasma to cut through the substrate efficiently while the intermediary layer absorbs and protects the underlying metal structures from damage
2Manufacturing precision
If complete separation of device regions is achieved, then singulation quality is improved, but metal interconnections may elongate and cause failure
Solution Approach 1:
The passivation layer is applied in advance to protect metal interconnections during the separation process. This preliminary protection enables complete separation of device regions without causing metal interconnection elongation or failure
Solution Approach 2:
The plasma cutting process, which could potentially harm metal interconnections, is converted into a beneficial process by using the passivation layer to protect the metal while allowing the plasma to effectively separate the device regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables reliable and cost-effective singulation of semiconductor chips by preventing metal interconnection elongation and particle formation, ensuring high-reliability semiconductor products.
Implementation Method 1
cutting into the scribe lane region of the substrate using a plasma
Implementation Method 2
forming a recess in the scribe lane region by deep reactive ion etching (DRIE)
Implementation Method 3
forming a self-assembled monolayer over the passivation layer
Data Source
AI summary
A method of cutting a substrate including a device region and a scribe lane region includes selectively forming a passivation layer in the device region of the substrate, selectively forming a self-assembled monolayer on the passivation layer, and performing plasma cutting in the scribe lane region.