Plasma CVD Device Gap Design for Abnormal Discharge
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Solution Overview
Problem
Conventional plasma CVD devices often experience abnormal discharges during film deposition, leading to defective CVD films due to gaps between components, which need to be suppressed to ensure film quality.
Innovation Solution
The plasma CVD device design incorporates specific gap dimensions (≤4 mm) and insulators with high volume resistivity to prevent abnormal discharges, featuring a chamber with a cathode, anode, plasma wall, anti-adhesion member, and pedestal, where insulators are strategically placed to minimize discharge occurrence and ensure film integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If gaps are present between the anode and anti-adhesion member, then the device structure is simpler and easier to manufacture, but abnormal discharge occurs leading to defective CVD films
Solution Approach 1:
The patent introduces an intermediary component (anti-adhesion member with controlled gaps) between the anode and plasma wall to prevent abnormal discharge. The gaps are designed to be ≤4mm to serve as electrical insulation barriers while maintaining the anti-adhesion function, thus mediating between structural simplicity and discharge prevention requirements
Solution Approach 2:
The patent applies parameter changes by precisely controlling the gap dimensions (≤4mm) between the anode and anti-adhesion member. This parameter optimization prevents abnormal discharge occurrence while maintaining ease of manufacture, resolving the contradiction between simple structure and film quality
2Device complexity
If larger gaps are used between components, then the device is easier to assemble and manufacture, but abnormal discharge occurs reducing film quality
Solution Approach 1:
The patent optimizes the gap parameter to be ≤4mm between components, which is large enough to simplify assembly and manufacturing but small enough to prevent abnormal discharge. This parameter optimization resolves the contradiction between device complexity and manufacturing precision
3Productivity
If higher voltage is applied to increase deposition rate, then productivity increases, but abnormal discharge occurs causing film defects
Solution Approach 1:
The patent implements preliminary anti-action by pre-configuring the anti-adhesion member with controlled gaps ≤4mm before deposition begins. This preventive structure blocks abnormal discharge pathways, allowing higher voltage application for increased deposition rate without compromising film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses abnormal discharges, reducing film defects and allowing for higher voltage application, thereby increasing deposition rates and reducing power consumption while maintaining film quality.
Implementation Method 1
A plasma wall 108 is arranged within the chamber 102 so as to cover a space between each of the cathode electrode 103 and the anode 104 and the substrate to be deposited 101
Implementation Method 2
a filament-shaped cathode electrode 103 made of, for example, tantalum is formed within the chamber 102. Both ends of the cathode electrode 103 are electrically connected to a cathode power source 105
Data Source
AI summary
A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.