Plasma CVD Dielectric Composition for Void-Free Gap Fill

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in filling high aspect ratio gaps with insulating materials, leading to gaps or voids that detrimentally impact device performance, and current flowable chemical vapor deposition (FCVD) processes suffer from poor chemical resistance and unfavorable stereochemical structures of precursors.

Innovation Solution

The use of a synthetic nanofill dielectric (SND) material formed using a CVD chamber with a rotary susceptor and plasma module, employing Si and C precursors with carbon content modulation, to create a dielectric layer with excellent flowability and chemical selectivity, such as SiCON, SiCN, or SiCO compositions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If flowable chemical vapor deposition (FCVD) processes are used to fill high aspect ratio gaps, then flowability is improved, but chemical resistance deteriorates

Engineering Contradiction:

ImproveflowabilityVSAvoidchemical resistance

Core Design Contradiction:

Ease of operationVSReliability

Solution Approach 1:

The patent employs FCVD-deposited oxide as a composite material that combines the flowability benefits of FCVD processes with enhanced chemical resistance through controlled deposition conditions and material composition, resolving the contradiction between ease of gap-filling operation and reliability of chemical resistance

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent applies parameter changes by adjusting deposition temperature, pressure, and precursor flow rates in the FCVD process to optimize both flowability and chemical resistance of the deposited oxide layer, transforming the material properties to simultaneously satisfy both requirements

Inventive Principle:

Principle #35Parameter changes

2Ease of manufacture

If FCVD precursors with large stereochemical structure are used, then deposition is achieved, but gap-fill performance deteriorates

Engineering Contradiction:

Improvedeposition capabilityVSAvoidgap-fill performance

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent changes the physical and chemical parameters of the precursor materials, selecting precursors with optimized molecular structures that enable effective gap-filling in high aspect ratio features while maintaining adequate stereochemical properties for successful deposition

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality by tailoring the precursor molecule structure to have specific local chemical groups that facilitate both deposition and effective filling of narrow gaps, optimizing the local molecular properties to satisfy both manufacturing requirements

Inventive Principle:

Principle #3Local quality

3Device complexity

If conventional gap-fill processes are used, then manufacturing simplicity is maintained, but device performance deteriorates due to gaps or voids

Engineering Contradiction:

Improveprocess simplicityVSAvoiddevice performance

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The patent replaces conventional mechanical or physical gap-filling methods with chemical vapor deposition processes that enable conformal and complete filling of high aspect ratio gaps through chemical reactions, eliminating voids while maintaining process integration

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent utilizes phase transitions in the FCVD process where precursors transition from gas phase to deposited oxide phase, enabling controlled material deposition that completely fills gaps without creating voids, thereby improving device performance

Inventive Principle:

Principle #36Phase transitions

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The SND material effectively fills high aspect ratio gaps, enhances gap-fill processing, and provides improved chemical resistance and etch selectivity, contributing to better device performance and manufacturing efficiency.

Implementation Method 1

a plasma module, wherein the plasma module is configured to generate plasma within the process chamber

Methodology Applied

Scientific EffectPlasma: Plasma

Implementation Method 2

depositing the dielectric material includes flowing a first precursor, a second precursor, and a reactant gas into a process chamber. While flowing the first precursor, the second precursor, and the reactant gas into the process chamber, the plasma is generated within the process chamber to deposit the dielectric material

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS12512317B2Dielectric material and methods of forming same

Publication Date: 2025.12.30 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

Provided is a dielectric material composition and related methods. The method includes patterning a substrate to include a first feature, a second feature adjacent to the first feature, and a trench disposed between the first and second features. The method further includes depositing a dielectric material over the first feature and within the trench. In some embodiments, the depositing the dielectric material includes flowing a first precursor, a second precursor, and a reactant gas into a process chamber. Further, while flowing the first precursor, the second precursor, and the reactant gas into the process chamber, a plasma is formed within the process chamber to deposit the dielectric material.