Plasma CVD Insulator Layer for Oxide Semiconductor Stability
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Solution Overview
Problem
The existing manufacturing processes for semiconductor devices with oxide semiconductor layers result in oxygen deficiency due to hydrogen dispersal from silicon oxide layers, leading to unstable characteristics in thin-film transistors.
Innovation Solution
A method involving the formation of an insulator layer with a hydrogen atom concentration of less than or equal to 1×10^21 atoms/cm^3 using a plasma CVD process with tetraisocyanatesilane gas and oxygen, where the power-to-flow ratio is greater than or equal to 17 W/sccm, to stabilize the semiconductor device characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a silicon oxide layer is formed using plasma CVD process with hydrogen-containing materials (silane or TEOS), then the insulator layer can be formed effectively, but hydrogen disperses from the insulator layer to the semiconductor layer causing oxygen deficiency and unstable characteristics
Solution Approach 1:
The patent changes the material composition parameter of the insulator layer by using silicon oxide formed without hydrogen-containing precursors, and controls the hydrogen atom concentration parameter to be less than or equal to 1×10^21 atoms/cm³. This parameter change prevents hydrogen diffusion to the semiconductor layer while maintaining the insulator layer's formation capability
Solution Approach 2:
The patent converts the potentially harmful effect of hydrogen presence in conventional processes into a benefit by establishing a controlled low-hydrogen environment. The strict control of hydrogen concentration (≤1×10^21 atoms/cm³) transforms what was previously an uncontrollable contaminant into a precisely managed parameter that protects the semiconductor layer from oxygen deficiency
2Ease of manufacture
If conventional plasma CVD process is used with hydrogen-containing materials, then the insulator layer formation is straightforward, but the semiconductor layer experiences oxygen deficiency leading to unstable thin-film transistor characteristics
Solution Approach 1:
The patent changes the chemical composition parameter of the insulator layer by eliminating hydrogen-containing materials and instead uses silicon oxide with controlled oxygen stoichiometry. The hydrogen atom concentration is parameterized and controlled to be ≤1×10^21 atoms/cm³, preventing oxygen loss from the semiconductor layer
Solution Approach 2:
The silicon oxide insulator layer acts as an intermediary barrier that prevents oxygen diffusion from the semiconductor layer. By controlling this intermediary layer's hydrogen content, the patent protects the semiconductor layer's oxygen content without requiring direct manipulation of the semiconductor layer itself
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly limits oxygen deficiency in the semiconductor layer, thereby stabilizing the characteristics of the semiconductor device and ensuring reliable operation.
Implementation Method 1
forming an insulator layer on the surface of the semiconductor layer. The insulator layer includes silicon oxide as a main component and has a hydrogen atom concentration that is less than or equal to 1×10^21 atoms/cm^3
Data Source
AI summary
A method for manufacturing a semiconductor device includes forming a semiconductor layer including an oxide semiconductor as a main component and forming an insulator layer on a surface of the semiconductor layer. The insulator layer includes silicon oside as a main component and has a hydrogen atom concentration that is less than or equal to 1×1021 atoms/cm3.