Plasma CVD Release Layer for Semiconductor Wafer Handling
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Solution Overview
Problem
The existing method for temporarily fixing a support to a substrate using a photothermal conversion layer is inefficient due to time-consuming formation and high running costs, as well as effluent issues, necessitating a more suitable manufacturing technique for laminates in semiconductor wafer handling systems.
Innovation Solution
A method involving a preliminary temperature increase of the support and reaction chamber using plasma treatment, followed by the formation of a release layer through plasma CVD, allowing for uniform discharge and efficient release layer formation, enabling the temporary fixation and subsequent easy release of the support from the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the photothermal conversion layer is formed by spin coating, then the release layer can be easily decomposed by light irradiation, but it takes time to form the layer and incurs high running costs with effluent issues
Solution Approach 1:
The patent replaces the mechanical spin coating process with a chemical vapor deposition (CVD) process. Instead of using centrifugal force to deposit the photothermal conversion layer, the invention uses CVD to form the layer from gaseous precursors, eliminating the need for spin coating equipment and reducing formation time while avoiding effluent generation.
Solution Approach 2:
The patent changes the deposition method parameters from liquid-phase spin coating to gas-phase CVD. This parameter change transforms the process from a time-consuming, costly, and effluent-generating method to a more efficient, cost-effective, and environmentally friendly approach while maintaining the functional properties of the release layer.
2Length of moving object
If the wafer is thinned by grinding to achieve high integration, then the chip thickness decreases, but the wafer strength decreases and cracks or warps occur
Solution Approach 1:
The patent applies a support plate to the wafer before thinning operations. This support plate acts as a cushioning layer that prevents the wafer from warping or cracking during the grinding process. The support plate is temporarily attached, provides mechanical reinforcement during thinning, and is subsequently removed after the thinning is complete.
Solution Approach 2:
The support plate serves as an intermediary between the grinding process and the wafer. It mediates the mechanical stress during thinning, protecting the wafer from direct contact with the grinding forces that would cause warping or cracking. The support plate is introduced, performs its protective function, and is then removed after serving its purpose.
3Productivity
If the wafer strength is decreased due to thinning, then high integration is achieved, but automatic transportation becomes difficult and manual handling is required
Solution Approach 1:
The support plate is attached to the thinned wafer before transportation operations. This cushioning support reinforces the fragile thinned wafer, enabling it to withstand the mechanical stresses of automatic transportation without warping or cracking, thus facilitating automated handling while maintaining high integration benefits.
Solution Approach 2:
The support plate acts as an intermediary that enables automatic transportation of thinned wafers. It provides the necessary mechanical strength for automated handling systems to grasp and transport the fragile thinned wafers without causing damage, bridging the gap between thin wafer design and automated manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient and cost-effective manufacturing of laminates for substrate processing, facilitating processes like wafer thinning and back wiring by ensuring uniform discharge and reducing handling difficulties associated with thin semiconductor wafers.
Implementation Method 1
a preliminary treatment process of increasing temperatures of the support carried into a reaction chamber and the inside of the reaction chamber by a plasma treatment
Implementation Method 2
a release layer which is provided between the substrate and the support and is configured to be transformed by absorbing light with which irradiation is performed through the support
Implementation Method 3
a release layer forming process of supplying a source gas serving as the release layer into the reaction chamber after the preliminary treatment process to form the release layer on the support
Data Source
AI summary
A method of manufacturing a laminate including a substrate, a support, and a release layer, the method including a preliminary treatment process of increasing temperatures of the support carried into a reaction chamber and the inside of the reaction chamber by a plasma treatment, and a release layer forming process of supplying a source gas serving as the release layer into the reaction chamber after the preliminary treatment process to form the release layer on the support.