Plasma CVD Electrode Layout for Semiconductor Warp Correction
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Solution Overview
Problem
Semiconductor substrates with three-dimensional memory cell arrays often warp due to the extending direction of word lines, affecting yield ratios and transportation in semiconductor manufacturing processes.
Innovation Solution
A semiconductor manufacturing apparatus is designed with a processing container, holder, gas introducing part, first and second gas dispersing plates, and electrodes to introduce and disperse process gases, applying electric fields to form material films on the substrate's back surface, correcting warp by varying film thickness across regions to counteract substrate curvature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If material films are formed on the back surface of the substrate to correct warp, then substrate warp correction is improved, but the device complexity increases due to additional processing steps and apparatus components
Solution Approach 1:
The gas supply system is divided into multiple regions (first region and second region) with separate gas supply plates and control mechanisms. This segmentation allows independent control of film thickness in different areas, enabling precise warp correction while maintaining manageable system complexity through modular design
Solution Approach 2:
Different regions of the substrate back surface are provided with material films having different thicknesses according to the local warp characteristics. The gas supply system delivers process gas with different flow rates to different regions, creating locally optimized film thickness profiles that counteract the specific warp patterns in each area
2Ease of manufacture
If uniform material films are formed on the substrate back surface, then the manufacturing process is simplified, but the warp correction effectiveness is reduced due to inability to address non-uniform curvature
Solution Approach 1:
The patent implements non-uniform film thickness by providing different gas flow rates to different regions. The gas supply plates are configured with multiple gas supply holes that deliver process gas at varying intensities, creating locally adapted film thickness profiles that match the non-uniform warp characteristics of the substrate
Solution Approach 2:
The gas supply system is designed to dynamically adjust process gas flow rates to different regions based on real-time or pre-determined warp characteristics. This dynamic control enables the system to adapt to varying substrate curvature patterns while maintaining a relatively simple overall apparatus structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively corrects substrate warp, improving yield ratios and enabling smooth transportation by forming material films with controlled thicknesses that counteract curvature, thereby enhancing semiconductor device quality and manufacturing efficiency.
Implementation Method 1
a lower electrode 60 and an upper electrode 80, which apply an electric field to the process gas to generate plasma
Implementation Method 2
a material film TF is formed on a first face F1 of the substrate W
Data Source
AI summary
An apparatus includes a container. A holder is in the container and holds a substrate. A gas-introducer is on a side of a first-face of the substrate and introduces a process gas into the container. A first gas supply plate is between the substrate and the gas introducing part and has first-holes allowing the process gas to pass. A first-electrode is between the substrate and the first gas supply plate and has second-holes supplying the process gas to the first-face of the substrate. A second-electrode is provided on a side of a second-face of the substrate and applies an electric field to the process gas between the first and second-electrodes. Partitions are provided between the first-electrode and the first gas supply plate, extend substantially linearly in a first direction substantially parallel to the first-face, and divide a space between the first-electrode and the first gas supply plate into regions.