Plasma Deposition Apparatus with Adjustable Substrate Stage Distance
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Solution Overview
Problem
Conventional plasma deposition apparatuses fail to provide flexible process conditions that satisfy both the pre-treatment and deposition processes in semiconductor manufacturing, leading to suboptimal wafer damage reduction and plasma uniformity.
Innovation Solution
A plasma deposition method and apparatus that adjust the distance between the substrate stage and the insulation plate to generate plasma in different gaps, allowing for separate process conditions for pre-treatment and deposition, using a lift mechanism and gas distribution assembly to control plasma density and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the distance between the wafer and the insulation plate is increased, then wafer damage is reduced, but plasma density and pre-treatment effectiveness deteriorate
Solution Approach 1:
The patent divides the plasma processing into two separate spatial zones: a first plasma region closer to the insulation plate for pre-treatment, and a second plasma region farther from the plate for deposition. This segmentation allows each region to have optimized plasma density and distance characteristics, resolving the contradiction between wafer damage reduction and pre-treatment effectiveness.
Solution Approach 2:
The patent applies different process conditions to different spatial locations: high plasma density near the insulation plate for effective pre-treatment, and lower plasma density farther away for damage-free deposition. This local quality approach allows each region to optimize its function without compromising the other.
2Reliability
If the distance between the wafer and the insulation plate is decreased, then pre-treatment effectiveness is improved, but wafer damage increases
Solution Approach 1:
The patent separates pre-treatment and deposition into distinct spatial zones with different distance characteristics. The first plasma region operates at optimal distance for pre-treatment effectiveness, while the second plasma region operates at larger distance to prevent wafer damage during deposition.
Solution Approach 2:
Different process parameters are applied locally: closer distance and higher plasma density in the pre-treatment zone, and farther distance with lower plasma density in the deposition zone, allowing each process to operate under optimal conditions.
3Device complexity
If a single plasma region is used, then device simplicity is maintained, but process flexibility and plasma uniformity deteriorate
Solution Approach 1:
The patent divides the plasma processing chamber into multiple plasma regions with different characteristics, enabling independent optimization of pre-treatment and deposition processes while maintaining a relatively simple overall device structure.
Solution Approach 2:
The patent enables dynamic control of plasma conditions by adjusting process parameters for different plasma regions, providing process flexibility and adaptability without requiring complex mechanical reconfiguration of the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces wafer damage and improves plasma uniformity and controllability, enhancing productivity in semiconductor device manufacturing.
Implementation Method 1
A first plasma is generated between the substrate stage and the insulation plate... A second plasma is generated between the substrate stage and the insulation plate
Data Source
AI summary
In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.