Plasma Film Deposition Timing to Minimize Voids on Patterned Substrates
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Solution Overview
Problem
Existing film deposition methods face inefficiencies in depositing films on substrates due to protruding parts of patterns on the substrate, leading to voids and incomplete coverage.
Innovation Solution
A film deposition method involving the application of RF power to a susceptor during a first time period, followed by bias power to a shower head in a second time period, with controlled gas supply to cut off protruding parts and minimize voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional film deposition is performed without controlling plasma component movement, then the deposition process is simple, but voids form and coverage is incomplete due to protruding parts of patterns on the substrate
Solution Approach 1:
The patent applies periodic action by alternately applying RF power to the susceptor and bias power to the shower head in different time periods. During the first time period, RF power generates plasma for film deposition. During the second time period, bias power is applied to the shower head to control the movement of plasma components toward the substrate, cutting off protruding parts and minimizing voids. This periodic switching enables complete film coverage while maintaining process control.
Solution Approach 2:
The patent changes physical parameters by switching between different power types (RF power and bias power) and controlling their application timing. By adjusting the power parameters applied to different components (susceptor versus shower head) at different time periods, the movement of plasma components is controlled to achieve complete film deposition over protruding pattern parts without creating voids.
2Manufacturing precision
If RF power is applied continuously to the susceptor, then plasma is generated for film deposition, but protruding parts of patterns are not adequately addressed leading to void formation
Solution Approach 1:
The patent implements periodic action by dividing the deposition process into distinct time periods. The first time period involves applying RF power to the susceptor for plasma generation and initial film deposition. The second time period involves applying bias power to the shower head to control plasma component movement and eliminate protruding parts. This periodic structure minimizes voids while managing the total deposition cycle time through efficient alternating operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Efficient film deposition is achieved by minimizing voids and ensuring complete coverage on the substrate by controlling the movement of plasma components, thereby improving the deposition process.
Implementation Method 1
supplying a second gas and a precursor to an inner space of a chamber using the shower head
Implementation Method 2
generating plasma in the inner space of the chamber by applying radio frequency (RF) power to a susceptor
Implementation Method 3
a film is formed on the surface of the substrate through a chemical reaction of the reaction gas
Data Source
AI summary
Provided is a film deposition method including: supplying a first gas to an inner space of a chamber using a shower head; generating plasma in the inner space of the chamber by applying radio frequency (RF) power to a susceptor, wherein a substrate is on a surface of the susceptor, and the RF power is applied to the susceptor during a first time period; applying bias power to the shower head in a second time period; supplying a second gas and a precursor to the inner space of the chamber using the shower head; and causing a film to be deposited on the substrate by applying the RF power to the susceptor.