Plasma Destaticization Residue Reduction
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Solution Overview
Problem
The self-assembly technique for forming fine patterns in semiconductor devices faces issues with residue generation during the destaticization of target objects from electrostatic chucks in plasma processing apparatuses, which affects the accuracy of the pattern formed by the block copolymer layer.
Innovation Solution
The method involves electrostatically attracting a target object with a silicon substrate and organic polymer layer to an electrostatic chuck, etching the organic polymer layer using a first gas, detaching it in a plasma of a second gas (oxygen or a mixture with a rare gas of lower atomic weight than argon), and then forming a block copolymer layer to reduce residue and enhance pattern accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the target object is destaticized in plasma of rare gas (argon) to detach from the electrostatic chuck, then the destaticization is effective, but impurities are adhered to the organic polymer layer causing residue generation
Solution Approach 1:
The patent changes the gas type parameter from rare gas (argon) to oxygen gas or a mixture of oxygen gas and rare gas with lower atomic weight. This parameter change fundamentally alters the plasma chemistry, causing impurities to be removed rather than adhered to the organic polymer layer, thereby resolving the residue generation problem while maintaining effective destaticization
Solution Approach 2:
The patent converts the potentially harmful effect of plasma exposure (which causes impurity adhesion with argon plasma) into a beneficial effect by using oxygen plasma. The oxygen plasma not only achieves destaticization but also actively removes impurities from the organic polymer layer, transforming a harmful process into a beneficial cleaning step
2Productivity
If the block copolymer layer is etched with residue on the organic polymer layer, then the etching process can proceed, but a pattern different from the initial pattern is formed reducing manufacturing precision
Solution Approach 1:
The patent performs preliminary cleaning action by exposing the organic polymer layer to oxygen plasma before forming the block copolymer layer. This preliminary action removes impurities that would otherwise interfere with subsequent processing, ensuring that the block copolymer layer forms on a clean surface and that subsequent etching produces the intended pattern with high precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses residue generation during destaticization, allowing for the formation of block copolymer patterns with high accuracy by using a polymer layer with reduced residue as a base.
Implementation Method 1
the target object is electrostatically attracted on an electrostatic chuck provided in a processing chamber of a plasma processing apparatus
Implementation Method 2
the target object is detached from the electrostatic chuck while a plasma of a second gas is generated in the processing chamber
Implementation Method 3
By destaticizing the target object while the target object is exposed to the plasma of the rare gas, it is possible to detach the target object from the electrostatic chuck
Implementation Method 4
the target object is exposed through the resist mask to a plasma of a first gas generated in the processing chamber so that the organic polymer layer is etched
Data Source
AI summary
This method for processing a target object includes steps ST1 to ST4. The target object has an organic polymer layer and a resist mask on a substrate. In step ST1, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST2, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST3, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step 4, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.