Plasma Processing Device Sidewall Transfer Integration
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Solution Overview
Problem
The process of forming a sidewall film mask for semiconductor device miniaturization is complex and costly due to the need for multiple device transfers during sidewall transfer processes, including film formation, dry etching, and wet etching, which complicates the manufacturing process and increases costs.
Innovation Solution
A method where a series of sidewall processes, including film deposition, etch-back, and core film removal, are performed within the same plasma processing device without transferring the wafer, using a plasma processor that maintains a desired decompressed atmosphere and applies specific power sources to generate plasma for efficient film deposition and etching, allowing for the formation of finer line and space patterns without exposing the wafer to air.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple independent devices are used for sidewall film formation, dry etching, and wet etching, then each process can be performed with specialized equipment, but the manufacturing process becomes complicated and costs increase
Solution Approach 1:
The patent combines film formation, dry etching, and wet etching processes into a single plasma processing device. The device includes a plasma generation unit, a showerhead for uniform plasma distribution, and a substrate stage that can perform multiple functions. This integration eliminates the need for transferring wafers between multiple independent devices, simplifying the manufacturing process while maintaining process quality through precise plasma control.
Solution Approach 2:
The plasma processing device is designed with multi-functionality to perform film deposition, dry etching, and wet etching operations. The showerhead structure and plasma generation system can be configured for different process modes, allowing a single device to replace multiple specialized equipment while maintaining the reliability of each specific process through optimized plasma parameters.
2Manufacturing precision
If multiple independent devices are used for sidewall transfer processes, then each process step can be optimized, but the manufacturing cost increases due to equipment investment
Solution Approach 1:
The patent merges multiple process functions into a single plasma processing device, reducing equipment investment costs. The integrated device maintains manufacturing precision through a well-designed plasma generation system and showerhead structure that ensure uniform plasma distribution, enabling precise pattern formation for sidewall transfer processes without requiring multiple expensive specialized devices.
3Reliability
If wafer is transferred among multiple devices, then each process can be performed independently, but the process time increases and productivity decreases
Solution Approach 1:
The patent combines multiple process steps within a single plasma processing device, eliminating wafer transfer operations between devices. This integration significantly reduces process time and improves productivity while maintaining reliable process control through a unified plasma generation and control system that can sequentially perform film formation, dry etching, and wet etching without exposing the wafer to external environments.
4Manufacturing precision
If conventional lithography is used, then the process is simple and cost-effective, but the resolution limit prevents formation of finer patterns
Solution Approach 1:
The patent uses preliminary lithographic patterning to create mandrels, then applies plasma-based sidewall transfer processes to generate finer patterns. The preliminary lithography step establishes the basic pattern structure, and subsequent plasma processes (film deposition, dry etching, wet etching) all performed in a single integrated device, extend the resolution beyond conventional lithography limits while controlling overall process complexity through integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces costs by minimizing equipment investment, and enables the formation of line and space patterns with pitches less than the lithography resolution limit, such as ¼ and ⅛, by performing all necessary processes within a single device, thereby enhancing the efficiency and cost-effectiveness of semiconductor device production.
Implementation Method 1
The depositing of the second film, etching of the second film, and removing of the first line pattern are sequentially performed within the same plasma processing device
Implementation Method 2
a dry etching device for performing a dry etch process on the thin film layer to etch back the sidewall film on the top surface of the core film
Data Source
AI summary
According to one embodiment, a method of manufacturing a semiconductor device includes forming a first line pattern comprising a first film above an underlying layer, depositing a second film on a sidewall and a top surface of the first line pattern of the first film, etching the second film to eliminate the second film on the top surface of the first line pattern of the first film and leave the second film on the sidewall of the first line pattern of the first film, and removing the first line pattern to form a second line pattern of the second film above the underlying layer. The depositing the second film, etching the second film, and removing the first line pattern are sequentially performed within the same plasma processing device.