Plasma Processing Device Temperature Control Without High-Frequency Filters
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Solution Overview
Problem
Existing plasma processing devices face limitations in temperature adjustment precision and responsiveness due to complex high-frequency power management and increased manufacturing and maintenance costs, particularly when using multiple temperature sensors and shield structures.
Innovation Solution
A plasma processing device with a simplified structure that isolates high-frequency power from temperature adjustment elements, eliminating the need for high-frequency filters in the power feeding path, and using a dielectric film connected to a ground with temperature adjustment arrays in a metallic base for precise temperature control without a high-frequency cut filter.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If high-frequency filters are installed in the power feeding path for temperature adjustment elements, then electrical noise interference is reduced, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent extracts and removes the high-frequency filter components from the power feeding path. By redesigning the feeding structure to eliminate the need for filters, the invention reduces device complexity and manufacturing cost while maintaining effective temperature control during plasma processing
Solution Approach 2:
The patent introduces a shield structure as an intermediary element that blocks high-frequency electromagnetic fields from interfering with the temperature adjustment elements. This shield acts as a mediator that protects the temperature control system without requiring complex filtering circuits
2Manufacturing precision
If multiple temperature sensors and shield structures are used for precise temperature control, then temperature adjustment precision is improved, but manufacturing cost and maintenance cost increase
Solution Approach 1:
The patent designs the temperature adjustment elements to inherently provide both temperature control and electromagnetic shielding functions. This self-service approach eliminates the need for separate shield structures and multiple sensors, reducing manufacturing cost while maintaining temperature adjustment precision through the integrated design
3Power
If high-frequency power is supplied to the sample stage for plasma generation, then plasma formation is enabled, but temperature control becomes difficult due to electromagnetic interference
Solution Approach 1:
The patent segments the sample stage structure into functionally independent parts: a plasma generation section that receives high-frequency power and a temperature control section that remains electrically isolated. This segmentation allows plasma formation to proceed while the temperature control elements operate without electromagnetic interference, maintaining stable temperature during processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances responsiveness and reduces manufacturing costs by simplifying the feeding structure and sealing, allowing for precise temperature adjustment across the substrate surface with improved control and reduced electrical noise interference.
Implementation Method 1
a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally
Implementation Method 2
transfers heat between a sample disposed on a sample stage and the sample stage
Implementation Method 3
a plasma generation device which supplies an electric field or a magnetic field to excite the process gas supplied to the processing chamber and generate the plasma
Implementation Method 4
atoms or molecules of the process gas supplied to the processing chamber from an introduction port of a shower plate configuring a ceiling surface of the processing chamber and disposed on the processing chamber are excited using the electric field or the magnetic field formed by the plasma generation device and the plasma is formed
Implementation Method 5
a sample disposed on the dielectric film configuring the top surface of the sample stage is adsorbed and held on the dielectric film using electrostatic force formed by power supplied to an electrode for electrostatic adsorption
Implementation Method 6
a potential difference with a potential of the plasma is formed by a bias potential formed by high-frequency power supplied to a metallic electrode disposed in the sample stage, charged particles of the plasma are attracted to a surface of a film layer of a process target
Implementation Method 7
charged particles of the plasma are attracted to a surface of a film layer of a process target on the top surface of the sample according to the potential difference to cause the charged particles to collide with the film layer
Data Source
AI summary
A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.