In-Situ Plasma Chamber Diagnosis Using OES Sputtering Rate
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Solution Overview
Problem
Current plasma system diagnosis in semiconductor manufacturing is inefficient and costly, as it relies on periodic preventive maintenance and external metrology, making it difficult to assess changes in plasma properties between maintenance cycles, which can lead to process failures and increased costs.
Innovation Solution
An in-situ diagnosis method using optical emission spectroscopy (OES) to monitor the plasma system's usability by sputtering a film formed over a blank substrate with inert gas, analyzing the sputtering rate through spectroscopic measurements, and comparing it to a baseline rate to determine the plasma processing system's condition for subsequent substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If periodic preventive maintenance and external metrology are used for plasma system diagnosis, then system reliability is maintained, but diagnosis frequency is low and process failures occur between maintenance cycles
Solution Approach 1:
The patent replaces external mechanical metrology systems with an in-situ optical emission spectroscopy system that uses light to diagnose plasma conditions. The OES system measures plasma properties through electromagnetic radiation without physical contact, enabling continuous monitoring between maintenance cycles while maintaining reliability.
Solution Approach 2:
The patent introduces optical emission spectroscopy as an intermediary diagnostic tool between the plasma system and external metrology. The OES system acts as a mediator that continuously monitors plasma health indicators (such as emission intensities and spectral lines) and provides real-time feedback on system condition without requiring direct physical intervention or shutdown.
2Manufacturing precision
If in-situ diagnosis is performed frequently, then process consistency is improved, but system complexity increases
Solution Approach 1:
The patent implements a universal OES diagnostic system that serves multiple functions: monitoring plasma power delivery, detecting chamber conditions, assessing RF sensor health, and evaluating overall plasma quality. This single multi-functional system achieves frequent diagnosis without requiring multiple separate complex diagnostic devices, thereby improving process consistency while limiting complexity growth.
Solution Approach 2:
The patent monitors changes in plasma parameters (emission intensities, spectral line ratios, peak-to-peak voltages) to diagnose system health. By tracking parameter variations over time and comparing against baseline values, the system achieves sensitive detection of plasma condition changes without requiring complex physical modifications to the chamber or processing system.
3Ease of manufacture
If external metrology is used for plasma diagnosis, then system cost is reduced, but diagnosis capability is insufficient between maintenance cycles
Solution Approach 1:
The patent replaces expensive external mechanical measurement systems with a more economical optical-based OES diagnostic approach. The OES system uses light emission from the plasma itself as the measurement source, eliminating the need for complex mechanical probes or external sensing equipment while providing continuous real-time data on plasma properties throughout the maintenance cycle.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for frequent, non-destructive, and cost-effective monitoring of plasma system health, reducing the risk of process failures and enabling real-time adjustments to plasma process parameters, thereby improving process consistency and reducing waste.
Implementation Method 1
generating a RF plasma in the plasma processing chamber from the inert gas
Implementation Method 2
performing an optical emission spectroscopy (OES) analysis, each OES analysis including depositing a film over a substrate loaded in the plasma processing chamber, sputtering the film by exposing the substrate to a plasma generated from an inert gas, and while exposing the substrate to the plasma, collecting a series of OES data
Implementation Method 3
depositing a film over the substrate
Implementation Method 4
performing plasma processes to process a set of substrates using a RF plasma processing system
Implementation Method 5
sputtering the film by exposing the substrate to a plasma generated from an inert gas
Data Source
AI summary
A method for processing a substrate that includes: processing a series of substrates using a plasma processing system having a plasma processing chamber by reactive ion etching (RIE) according to a RIE process condition; and after the processing, performing an in-situ diagnosis of the plasma processing system, the in-situ diagnosis including loading a substrate in the plasma processing chamber, depositing a film over the substrate, purging the plasma processing chamber with an inert gas, generating a RF plasma in the plasma processing chamber from the inert gas, sputtering the film to generate an etch product, the sputtering including exposing the substrate to the RF plasma, determining a rate of the sputtering of the film, and based on the rate of the sputtering of the film, determining a usability condition of the plasma processing system for processing another substrate.