Plasma Dicing Frame with Cover Ring and Partition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current plasma etching technologies are not compatible with standard wafer dicing techniques, particularly for substrates mounted on tape and supported in a frame, limiting the adoption of plasma etching for die separation in semiconductor manufacturing.
Innovation Solution
A plasma etching apparatus and method that uses a substrate mounted on tape and a frame, with a cover ring to protect the frame from plasma exposure and a mechanical partition to control ion density, allowing for efficient die separation compatible with existing dicing techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma etching is used for die separation, then etching efficiency and die separation quality are improved, but compatibility with standard wafer handling equipment deteriorates
Solution Approach 1:
The frame is divided into multiple segments with individual support legs that can be independently adjusted. This segmentation allows the frame to adapt to different wafer sizes and handling equipment configurations, resolving the compatibility issue while maintaining plasma etching efficiency
Solution Approach 2:
The support leg height is made adjustable to change the frame's geometric parameters. This allows the frame to accommodate different wafer thicknesses and equipment requirements, enabling plasma etching to be performed on standard handled wafers without compromising equipment compatibility
2Strength
If the frame is exposed to plasma, then structural support is maintained, but contamination and damage to the frame occur
Solution Approach 1:
The frame is extracted from the plasma environment by positioning it outside the plasma generation region. Only the substrate receives plasma treatment, while the frame remains protected, maintaining structural integrity without plasma contamination
Solution Approach 2:
The substrate acts as an intermediary between the plasma source and the frame. The plasma is directed onto the substrate for die separation, preventing direct contact between plasma and frame, thus protecting the frame from contamination while maintaining support function
3Adaptability or versatility
If mechanical dicing is used for die separation, then equipment compatibility is maintained, but breakage and kerf loss increase
Solution Approach 1:
The mechanical dicing system is replaced with a plasma-based system. Plasma etching eliminates the physical contact and mechanical stress that cause breakage and kerf loss in mechanical dicing, while the frame structure maintains compatibility with standard handling equipment
Solution Approach 2:
Plasma processing occurs in a controlled inert or reactive gas atmosphere that allows precise material removal without mechanical contact. This eliminates the physical trauma caused by mechanical saws, reducing die breakage and minimizing kerf width while maintaining equipment compatibility through the frame structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and compatible plasma etching for die separation, reducing breakage and kerf dimensions, and improving processing time and die topology flexibility, while maintaining equipment compatibility with standard dicing operations.
Implementation Method 1
a plasma source (620) to generate a plasma
Implementation Method 2
Fluorine containing gases, such as SF6, F2 or NF3 are used to etch silicon at a high rate
Implementation Method 3
The substrate is typically clamped to a temperature controlled support. A pressurized fluid, typically a gas such as Helium is maintained between the substrate and the support to provide a thermal conductance path for heat transfer
Implementation Method 4
an electrostatic chuck (ESC) is used to provide the clamping force
Implementation Method 5
A pressurized fluid, typically a gas such as Helium is maintained between the substrate and the support to provide a thermal conductance path for heat transfer
Data Source
Figure 1
Figure 2
Figure 3
AI summary
The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.