Plasma Dicing Semiconductor Wafer Intermediate Ring
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Solution Overview
Problem
Current plasma etching equipment is not compatible with substrates mounted on tape and supported in a frame, limiting the adoption of plasma dicing techniques for semiconductor substrates, which require standard front side masking and handling methods.
Innovation Solution
A plasma processing apparatus that includes a process chamber with a plasma source and a work piece support, where the substrate is placed on a support film and a rigid frame with an intermediate ring, allowing for plasma processing without contact between the ring and the substrate, and subsequent removal of the frame for downstream processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If plasma etching equipment is designed for standard substrates without frames, then plasma processing can be performed, but the equipment is not compatible with substrates mounted on tape and supported in a frame
Solution Approach 1:
A removable rigid frame with intermediate ring is introduced as an intermediary component between the substrate and the plasma processing system. The frame supports the substrate on the support film while allowing plasma access through the intermediate ring configuration, enabling compatibility without permanently modifying the core plasma equipment
Solution Approach 2:
The support structure is segmented into removable components (rigid frame, intermediate ring) that can be separated from the substrate after processing. This allows the plasma processing chamber to handle framed substrates during processing while enabling easy removal of the frame for downstream substrate handling
2Reliability
If mechanical clamping is used to hold the substrate, then the substrate can be secured, but contamination occurs due to contact between the clamp and substrate
Solution Approach 1:
The mechanical clamping system is replaced with an electrostatic chuck that uses electrostatic forces to hold the substrate. This non-contact method secures the substrate during plasma processing without physical contact, thereby preventing contamination from clamp-substrate interaction
Solution Approach 2:
A pressurized inert gas (such as nitrogen or argon) is maintained between the substrate and the electrostatic chuck to provide both thermal conduction for heat removal and a clean atmosphere that prevents contamination while allowing electrostatic holding
3Productivity
If mechanical dicing is used to separate die, then separation can be achieved, but chipping and breakage occur along die edges
Solution Approach 1:
The mechanical dicing process is replaced with plasma etching that uses reactive plasma to selectively remove material along the scribe lines. This chemical etching method separates die without mechanical contact, eliminating chipping and breakage along die edges while maintaining high productivity
Solution Approach 2:
The etching process uses parameter control (plasma power, gas flow, pressure) to achieve precise material removal. By adjusting these parameters, the plasma etching process can cleanly separate die with high precision while maintaining efficient processing speed
4Reliability
If the rigid frame remains on the substrate during processing, then support is provided, but interference with downstream processing occurs
Solution Approach 1:
The support structure is designed as removable segments (rigid frame with intermediate ring) that can be separated from the substrate after plasma processing. This allows the frame to provide support during processing while enabling easy removal for downstream operations that require bare substrates
Solution Approach 2:
The rigid frame is designed as a temporary, disposable or reusable support structure that is discarded (removed) after serving its purpose during plasma processing. The frame can be recovered and reused for subsequent substrates, while the substrate proceeds to downstream processing without frame interference
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables plasma dicing of semiconductor substrates while maintaining compatibility with established handling and masking techniques, reducing breakage and kerf dimensions, and improving processing efficiency and die topology flexibility.
Implementation Method 1
generating a plasma through the plasma source; processing the substrate by exposing the substrate of the work piece to the generated plasma
Implementation Method 2
an electrostatic chuck may be used to provide the clamping force
Implementation Method 3
A pressurized fluid, typically a gas such as Helium is maintained between the substrate and the support to provide a thermal conductance path for heat transfer
Data Source
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AI summary
The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.