Plasma Dicing Lane Structure for Metal-Residue-Free IC Separation
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Solution Overview
Problem
Conventional IC devices face issues such as metal residue and contamination during plasma dicing, gate height variation leading to process problems like pattern density and processing uniformity, and complexity in IC processing and manufacturing.
Innovation Solution
The semiconductor structure incorporates a plasma dicing lane designed with metal-free dielectric gate stacks and dummy features, along with seal ring and guard ring structures, to prevent metal residue and enhance processing uniformity and mechanical strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If conventional IC devices are used in plasma dicing lane, then metal residue occurs during plasma dicing, but using metal-free structures increases device complexity
Solution Approach 1:
The patent extracts and removes metal components from the gate stack structure in the plasma dicing lane, replacing them with dielectric materials. This extraction of harmful metal elements eliminates the source of metal residue during plasma dicing while maintaining the functional integrity of the device structure through alternative dielectric-based gate stacks.
Solution Approach 2:
The patent applies different structural qualities to different regions: the plasma dicing lane uses metal-free dielectric gate stacks while other regions may retain conventional metal gate structures. This local differentiation allows the plasma dicing lane to be free of metal residue issues while preserving the benefits of metal gates in regions where plasma dicing is not performed.
2Manufacturing precision
If gate height variation is present, then processing uniformity deteriorates, but increasing gate height control complexity increases manufacturing complexity
Solution Approach 1:
The patent changes the material composition parameter of the gate stack from metal-based to dielectric-based in the plasma dicing lane. This parameter change eliminates gate height variation issues that lead to processing non-uniformity, as dielectric materials provide more consistent etch rates and deposition characteristics compared to metal gates, thereby improving manufacturing precision without requiring complex additional control mechanisms.
3Productivity
If dicing lane is used for plasma dicing, then productivity increases, but metal residue and contamination occur reducing reliability
Solution Approach 1:
The patent converts the harmful effect of metal-containing gate stacks during plasma dicing into a benefit by replacing them with dielectric gate stacks. The dielectric materials not only eliminate metal residue and contamination that harm reliability but also maintain or enhance the plasma dicing process efficiency, thereby simultaneously improving productivity and reliability.
Data Source
AI summary
The present disclosure provides a semiconductor structure that includes a substrate having a circuit region and a seal ring region surrounding the circuit region, and a dicing lane surrounding the seal ring region, wherein the dicing lane includes a first dicing region and a second dicing region disposed on both sides of the first dicing region; first active regions formed in the circuit region; first gate stacks formed on the first active region in the circuit region, the first gate stacks including metal electrodes; second active regions formed in the first dicing region; dielectric structures formed on the second active regions in the first dicing region; and second gate stacks formed on an isolation feature in the second dicing region.