Plasma Dicing Cover Ring with Perforated Regions
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Solution Overview
Problem
Current plasma etching technologies for dicing semiconductor wafers are not compatible with standard wafer handling techniques, particularly those involving substrates mounted on tape and supported in a frame, limiting the adoption of plasma dicing for efficient die separation.
Innovation Solution
A plasma processing apparatus that uses a vacuum chamber with a high-density plasma source, an electrostatic chuck, and a cover ring with perforated regions to protect the frame and tape from plasma damage, allowing for the separation of semiconductor substrates into individual die while maintaining compatibility with conventional handling methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma etching is used for dicing semiconductor wafers, then die separation efficiency and precision are improved, but compatibility with standard wafer handling techniques deteriorates
Solution Approach 1:
A frame structure is introduced as an intermediary component to hold the substrate and tape assembly, enabling plasma etching to work with standard handling techniques. The frame provides a stable platform that accommodates the substrate mounted on tape, allowing the plasma process to access the substrate while maintaining compatibility with conventional wafer handling infrastructure.
Solution Approach 2:
The tape material is selected to have specific local properties - it is plasma-resistant in the areas that need protection while allowing plasma access to the substrate surfaces. The frame structure also exhibits local quality by providing protection in certain zones while allowing plasma exposure in etching zones, enabling differentiated functionality within the same handling system.
2Adaptability or versatility
If substrate is mounted on tape and supported in frame for plasma etching, then handling compatibility is improved, but frame and tape protection from plasma damage becomes problematic
Solution Approach 1:
The harmful plasma is extracted or excluded from specific zones by using a frame structure with openings positioned to allow plasma access only to the substrate areas requiring etching. The frame and tape are physically separated from the high plasma density zones through strategic positioning and geometric design, preventing plasma damage while maintaining handling compatibility.
Solution Approach 2:
The frame structure serves as a protective intermediary between the plasma environment and the tape substrate assembly. It provides a barrier that shields the tape and non-etching portions of the substrate from direct plasma exposure, while still allowing the plasma to reach the areas that need etching through controlled openings and geometric configurations.
3Productivity
If plasma etching is used for die separation, then processing speed is improved, but kerf dimension control becomes more challenging
Solution Approach 1:
The frame structure is designed with varying opening sizes and shapes in different locations to control plasma flux locally. Areas requiring precise kerf control have restricted plasma access through smaller or more controlled openings, while areas requiring faster removal have more open access. This spatial variation in plasma exposure quality enables simultaneous optimization of speed and precision across different regions of the substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and damage-free separation of semiconductor die with reduced kerf dimensions and processing time, compatible with standard wafer handling techniques, and adaptable for various substrate materials.
Implementation Method 1
an electrostatic chuck
Implementation Method 2
uses plasma etching to separate the wafer into individual die
Data Source
AI summary
The present invention provides a method for plasma processing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing a cover ring above the work piece, the cover ring having at least one perforated region, and at least one non-perforated region; generating a plasma using the plasma source; and processing the work piece using the generated plasma.