Plasma Dicing Semiconductor Wafer with Support Film
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Solution Overview
Problem
Current dicing methods for semiconductor substrates, such as mechanical sawing and laser dicing, are inefficient and lead to breakage, increased processing time, and limited flexibility in die topology, especially as device sizes decrease, and existing plasma etching equipment is not compatible with standard dicing techniques.
Innovation Solution
A plasma processing apparatus that uses a vacuum chamber with a high-density plasma source and a support film on a frame to etch semiconductor substrates, allowing for precise separation of die while protecting the frame and tape from damage, and depositing a passivation layer to remove residues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mechanical sawing or laser dicing is used to separate die from substrate, then die separation is achieved, but breakage increases and processing time increases
Solution Approach 1:
The patent replaces mechanical sawing and laser dicing systems with a plasma-based separation system. The plasma etching apparatus uses reactive ion plasma to chemically etch and separate the die from the substrate, eliminating the need for mechanical contact and laser processing. This substitution reduces both processing time and breakage risk inherent in mechanical and thermal methods.
Solution Approach 2:
The patent changes the physical and chemical parameters of the separation process by using plasma chemistry instead of mechanical force or laser energy. By controlling plasma power, gas composition, and pressure parameters, the system achieves precise control over the etching process, enabling fast separation without the breakage associated with mechanical methods.
2Adaptability or versatility
If standard dicing techniques are used, then die separation is achieved, but flexibility in die topology is limited
Solution Approach 1:
The patent applies local quality by using photomask patterns to define specific separation regions tailored to the desired die topology. The plasma etching process can be selectively applied to different areas of the substrate through patterned masking, enabling non-rectilinear die formats and complex layouts while maintaining manufacturing simplicity through standard photolithography techniques.
3Adaptability or versatility
If existing plasma etching equipment is used, then plasma processing capability is available, but compatibility with standard dicing techniques is lacking
Solution Approach 1:
The patent makes plasma etching equipment universal by adapting it to perform standard dicing functions. The system incorporates features such as photomask support, electrostatic chucking for substrate handling, and integration with existing semiconductor fabrication workflows. This allows the plasma etcher to replace dedicated dicing equipment while maintaining compatibility with standard manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces breakage and processing time, allows for non-rectilinear die formats, and maintains the integrity of the substrate and support materials, enhancing the efficiency and compatibility with standard dicing techniques.
Implementation Method 1
plasma etching equipment is used extensively in the processing of these substrates to produce semi-conductor devices
Implementation Method 2
Numerous gas chemistries appropriate to the material to be etched have been developed
Implementation Method 3
A pressurized fluid, typically a gas such as Helium is maintained between the substrate and the support to provide a thermal conductance path for heat transfer
Implementation Method 4
More frequently an electrostatic chuck (ESC) is used to provide the clamping force
Data Source
AI summary
The present invention provides a method for plasma dicing a substrate. The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas and at least one device structure. The substrate is placed onto a support film on a frame to form a work piece. A process chamber having a plasma source is provided. A work piece support is provided within the plasma process chamber. The work piece is placed onto the work piece support. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.