Plasma Dicing of Semiconductor Substrates to Minimize Side Wall Cracks
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Solution Overview
Problem
Conventional semiconductor chip separation methods, such as mechanical sawing and plasma dicing, often result in fine cracks in chip side walls and require broad kerfs, leading to reliability issues and difficulties with metallization processing.
Innovation Solution
A partial dicing method involving the formation of grooves or trenches between chips, followed by complete separation using mechanical or particle beam techniques, which reduces stress and allows for precise control over metallization removal to enhance separation quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mechanical sawing techniques are used for separation, then chip separation can be achieved, but broad kerfs and crack formation occur
Solution Approach 1:
The patent replaces mechanical sawing with plasma dicing technology. The plasma beam (electromagnetic field-based) eliminates the need for physical contact between the cutting tool and the substrate, thereby avoiding mechanical stress that causes cracks and broad kerfs. The plasma process achieves precise separation with minimal damage to the chip structure.
Solution Approach 2:
The patent changes the physical state and parameters of the cutting process from mechanical to plasma-based. By controlling plasma parameters such as power, gas flow, and beam focus, the process achieves precise kerf width control and eliminates crack formation associated with mechanical sawing.
2Manufacturing precision
If plasma dicing is used for separation, then narrow kerfs can be achieved, but metallization causes processing difficulties
Solution Approach 1:
The patent segments the plasma dicing process into distinct stages: first dicing through the semiconductor substrate, then separate etching of the metallization layers. This segmentation allows optimization of each stage independently, using appropriate plasma parameters for substrate cutting and different parameters for metal layer removal.
Solution Approach 2:
The patent introduces photoresist or other masking materials as intermediaries to protect specific areas during plasma dicing. These intermediaries enable selective removal of metallization layers while preserving the substrate structure, simplifying the overall process by providing clear process control.
3Productivity
If conventional separation processes are used, then chip separation can be achieved, but fine cracks occur in side walls of chip dies
Solution Approach 1:
The patent replaces mechanical separation processes with plasma-based dicing. The plasma beam removes material through vaporization and chemical reactions rather than mechanical force, eliminating the lateral stress that causes cracks in chip side walls while maintaining high separation efficiency.
Solution Approach 2:
The patent uses plasma (ionized gas) as the cutting medium, which flows and interacts with the substrate in a controlled manner. The plasma jet delivers energy concentrated at the kerf zone, achieving clean separation without the mechanical contact that causes side wall cracking.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes crack formation and improves the quality of chip separation, reducing the risk of reliability issues and enabling more precise control over metallization, resulting in higher-quality chip dies.
Implementation Method 1
when chip separation is performed using so-called plasma dicing
Implementation Method 2
partial dicing of a substrate is performed, that is, material between chips or other substrate parts to be separated is partially removed
Implementation Method 3
The substrate is then treated with a particle beam, for example, a water beam or ion beam
Implementation Method 4
or with a laser beam
Implementation Method 5
or in which an expansion of an expansion tape is used to separate the chip dies from each other
Data Source
AI summary
Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts.