Plasma Die Singulation Sidewall Healing
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Solution Overview
Problem
Current methods for singulating semiconductor die from a substrate, such as sawing, lasering, or jet ablating, often result in damage to the sidewalls and kerf areas, compromising the reliability and strength of the semiconductor package due to chipping and cracking, which are not effectively addressed by existing technologies.
Innovation Solution
The method involves exposing the substrate material in the die street by removing a metal layer and/or passivation layer through processes like sawing, lasering, or jet ablating, followed by plasma etching to singulate the die, which also heals the damaged sidewalls and reduces the width of the die street, thereby enhancing die reliability and strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If sawing, lasering, or jet ablating is used to singulate semiconductor die, then the die can be separated from the substrate, but sidewall damage and chipping occur compromising reliability and strength
Solution Approach 1:
The patent replaces mechanical sawing with plasma etching to singulate the semiconductor die. The plasma process uses reactive ions to chemically etch the material rather than mechanical cutting, eliminating the chipping and sidewall damage associated with mechanical contact. This substitution maintains singulation capability while dramatically improving die reliability by avoiding mechanical stress and contact-induced damage.
Solution Approach 2:
The patent changes the physical and chemical parameters of the singulation process by using controlled plasma chemistry and ion energy. By adjusting plasma power, gas composition, and etch chemistry, the process achieves clean, damage-free cutting of the substrate. This parameter change transforms the singulation mechanism from mechanical force to controlled chemical reaction, eliminating the harmful effects of mechanical stress.
2Ease of manufacture
If conventional singulation methods are used, then die separation is achieved, but chipping and cracking damage the kerf areas
Solution Approach 1:
The patent replaces mechanical cutting with plasma etching to create the kerf. Instead of mechanical blades causing chipping and cracking at the edges of the cut, the plasma process chemically removes material in a controlled manner, producing clean, intact kerf walls. This maintains ease of manufacture through automated plasma processing while dramatically improving kerf strength by eliminating mechanical damage.
3Reliability
If plasma etching is used to singulate die, then sidewall damage is healed and die street width is reduced, but additional process steps are required
Solution Approach 1:
The patent merges the singulation and sidewall healing functions into a single plasma etching process. The same plasma conditions that etch the die street also simultaneously repair damaged sidewalls through controlled deposition and reflow. This consolidation achieves multiple benefits (singulation, damage removal, sidewall strengthening) in one step, offsetting the added process complexity with operational efficiency.
Solution Approach 2:
The plasma etching process is designed to perform preliminary healing action during the singulation itself. By controlling plasma parameters, the process initially etches the die street and then simultaneously deposits and reflows material to heal sidewall damage. This preliminary action eliminates the need for separate repair steps, reducing overall process complexity while improving die strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the reliability and strength of semiconductor die by minimizing damage during singulation and allowing for thinner die streets, particularly beneficial for power semiconductor devices, by using plasma etching to heal sidewall damage and narrow the die street width.
Implementation Method 1
singulating a plurality of die included in the substrate through plasma etching the exposed substrate material of the substrate in the die street
Implementation Method 2
removing damage from a sidewall of the die street through the plasma etching
Data Source
AI summary
Implementations of methods of singulating a plurality of die included in a substrate may include exposing a substrate material of a substrate in a die street through removing a metal layer in the die street coupled to the substrate, wherein only a portion of the substrate material in the die street is removed, and singulating a plurality of die included in the substrate through plasma etching the exposed substrate material of the substrate in the die street.