Low-Temperature Plasma Dielectrics for Void-Free Fin Isolation
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Solution Overview
Problem
The scaling down of semiconductor devices introduces challenges such as voids and seams in dielectrics, high manufacturing costs, and device degradation due to high thermal budgets and annealing processes, which affect performance and complexity.
Innovation Solution
The use of flowable isolation materials treated with low temperature plasma to form low thermal budget dielectrics, reducing voids and seams, and minimizing device degradation by using low temperature plasma treatment to form dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high temperature annealing processes are used to form dielectric layers, then dielectric quality is improved, but device degradation increases due to fin bending and Si/SiGe intermixing
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperature (600-900°C) to low temperature (200-500°C) plasma treatment. This parameter change allows dielectric formation without causing fin bending and Si/SiGe intermixing, thus improving device reliability while maintaining dielectric quality through plasma-enhanced chemical vapor deposition
Solution Approach 2:
The patent replaces thermal annealing with plasma treatment. Instead of using high temperature thermal energy to form and densify dielectric layers, the invention uses plasma chemistry (reactive species, ions, and radicals) to achieve dielectric formation at low temperatures, substituting a thermal-mechanical process with a plasma-chemical process
2Ease of manufacture
If conventional dielectric deposition methods are used, then dielectric layers are formed, but voids and seams appear reducing manufacturing capacity
Solution Approach 1:
The patent changes the deposition parameters by using plasma-enhanced chemical vapor deposition with flowable precursors at low temperature. This enables conformal deposition without voids and seams that plague conventional methods, improving manufacturing capacity while maintaining ease of formation through a single-step process
Solution Approach 2:
The patent uses composite plasma-chemical processes combining flowable precursor deposition with in-situ plasma treatment. This composite approach creates defect-free dielectric layers by integrating deposition and densification into one process, eliminating the need for separate annealing steps and improving manufacturing capacity
3Manufacturing precision
If high thermal budget processes are used to form dielectrics, then dielectric properties are enhanced, but manufacturing costs increase and device degradation occurs
Solution Approach 1:
The patent merges dielectric deposition and densification into a single plasma treatment step. By combining what were previously separate processes (deposition followed by high-temperature annealing) into one low-temperature plasma process, the invention reduces manufacturing complexity and cost while maintaining enhanced dielectric properties
Solution Approach 2:
The patent changes the thermal budget parameter from high to low temperature processing. This parameter change eliminates the need for expensive high-temperature equipment and process control while achieving equivalent or superior dielectric properties through plasma enhancement, thereby reducing manufacturing costs and device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs, improves manufacturing capacity, and enhances device performance by minimizing defects like fin bending and Si/SiGe intermixing, while maintaining reliability and reducing thermal budget.
Implementation Method 1
treating the flowable isolation material with a plasma
Implementation Method 2
forming low thermal budget dielectrics by depositing a flowable isolation material and treating the flowable isolation material with a plasma
Data Source
AI summary
The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.