Dry Cleaning Plasma Processing Dielectric Members
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Solution Overview
Problem
Conventional methods for removing adhered precious metals and ferroelectric materials from dielectric members in plasma processing apparatuses are inefficient, particularly for thick or strongly adhered substances, leading to low removal efficiency and increased particle contamination, which hampers throughput.
Innovation Solution
A dry cleaning method utilizing an inductively-coupled plasma generated by introducing high-frequency power and fluorine gases into a vacuum container, where fluorine ions and radicals sputter and react with adhered materials to efficiently remove precious metals and ferroelectric substances from dielectric members.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If impact of ions is used to remove adhering matter, then adhering matter can be removed, but removal efficiency is low and throughput is reduced when adhering matter is thick or strongly adhered
Solution Approach 1:
The invention changes the chemical composition of the plasma by introducing fluorine-containing gas, transforming the cleaning mechanism from purely physical ion impact to a combination of chemical reaction and physical removal. This parameter change in plasma composition enables efficient removal of strongly adhered materials without requiring extended processing time, thus resolving the contradiction between removal effectiveness and throughput.
Solution Approach 2:
The invention replaces the mechanical/physical cleaning mechanism (ion impact) with a chemical mechanism (fluorine-based plasma reaction). The fluorine radicals chemically react with the adhering matter to form volatile compounds, substituting the inefficient physical sputtering process with a more effective chemical etching process that achieves better removal efficiency in shorter time.
2Reliability
If conventional cleaning methods are used, then some adhering matter is removed, but particle contamination remains high and cannot be significantly decreased
Solution Approach 1:
The invention changes the chemical reactivity parameter of the plasma by introducing fluorine-containing gas. The fluorine radicals have high chemical reactivity toward metal and ferroelectric materials, enabling complete removal of adhering matter without leaving residual particles. This chemical parameter change transforms the cleaning outcome from partial removal with particle contamination to complete removal with minimal particles.
3Reliability
If more time is allocated for ion impact cleaning, then adhering matter removal may be improved, but throughput is significantly lowered
Solution Approach 1:
The invention substitutes the time-consuming physical ion impact process with a faster chemical reaction process using fluorine plasma. The chemical etching mechanism reacts rapidly with adhering matter to form volatile fluorides, achieving complete removal in significantly shorter time compared to conventional ion bombardment, thus resolving the time-completeness contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces particle contamination and improves throughput by effectively removing adhered materials, enhancing the cleaning efficiency and surface quality of dielectric members.
Implementation Method 1
fluorine ions and radicals sputter and react with adhered materials to efficiently remove precious metals and ferroelectric substances from dielectric members
Implementation Method 2
an inductively-coupled plasma generated by introducing high-frequency power and fluorine gases into a vacuum container
Data Source
AI summary
This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.