Plasma Edge Ring with Recessed Surface for Ion Flow Control
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Solution Overview
Problem
Current plasma etching technologies face challenges in controlling mask backside etching and ion flow, leading to reduced manufacturing yield and quality issues in semiconductor device fabrication.
Innovation Solution
A plasma etching apparatus with a plasma edge ring that includes a plate body with a placement hole and a recessed surface, along with a guide electrode, is used to control ion flow and prevent plasma ion particles from etching the bottom surface of the mask, by applying different voltages to the plasma and guide electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma etching is used, then etching process can be performed, but mask backside etching cannot be controlled leading to quality issues
Solution Approach 1:
The plasma electrode is segmented into a central region and an edge ring region, allowing independent voltage control. The edge ring is divided into multiple segments that can be controlled separately, enabling precise control of ion flow at different locations around the mask periphery to prevent backside etching.
Solution Approach 2:
Different voltage conditions are applied to different spatial regions of the plasma electrode. The edge ring regions receive different voltage control compared to the central region, creating localized electric field conditions that control ion flow specifically at the mask periphery where backside etching occurs.
2Productivity
If ion flow is not controlled, then etching speed is maintained, but plasma ion particles etch the bottom surface of the mask reducing yield
Solution Approach 1:
The edge ring acts as an intermediary structure between the plasma source and the mask. By controlling the voltage on the edge ring, ion flow is mediated and directed away from the mask bottom surface, preventing harmful etching while maintaining the overall etching process efficiency.
Solution Approach 2:
The edge ring applies a preliminary counteracting electric field that prevents ions from reaching the mask bottom surface before they can cause harmful etching. This anti-action is applied in advance at the periphery region where ions would otherwise be directed.
3Device complexity
If simple plasma electrode is used, then device complexity is low, but ion flow control capability is insufficient
Solution Approach 1:
The plasma electrode is divided into distinct segments (central region and edge ring regions) that can be independently controlled. This segmentation enables precise ion flow control at different locations without requiring a completely complex electrode design.
Solution Approach 2:
The edge ring structure serves multiple functions: it defines the plasma reaction region, controls ion flow direction, and prevents mask backside etching. This multi-functionality achieves sophisticated ion flow control within a relatively simple added structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces or prevents etching on the bottom surface of the mask, improving the quality and reliability of semiconductor devices by controlling ion flow and increasing manufacturing yield.
Implementation Method 1
applying different voltages to the plasma and guide electrodes
Implementation Method 2
control ion flow and prevent plasma ion particles from etching the bottom surface of the mask
Implementation Method 3
plasma etching apparatus
Implementation Method 4
etching process
Data Source
AI summary
Disclosed are plasma edge rings, plasma etching apparatuses, and plasma etching methods. The plasma etching apparatus comprises a plasma electrode, a plasma edge ring on the plasma electrode, and a guide electrode outside an etching target on the plasma electrode. The plasma edge ring provides a placement hole that vertically penetrates a center of the plasma edge ring, and a recess on a portion of an inner lateral surface that defines the placement hole. The recess is outwardly recessed from the inner lateral surface.