Plasma Edge Ring Voltage Control for Silicon Deposition Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current target object processing methods for etching organic films using photoresist layers as masks are limited in their ability to achieve uniform and controlled deposition of materials on the wafer surfaces, particularly at the edge regions, due to the lack of precise control over plasma processing parameters.
Innovation Solution
A plasma processing method and apparatus that utilize a capacitively coupled parallel plate configuration with a mounting table and an outer peripheral member, applying DC and high-frequency voltages to generate and control plasma for precise etching and deposition, allowing for the application of a processing gas containing rare gases to achieve uniform and controlled silicon deposition on both the central and edge regions of the wafer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional plasma processing is used without separate edge region control, then the processing chamber structure remains simple, but the controllability of plasma processing parameters at edge regions deteriorates
Solution Approach 1:
The processing chamber is segmented into two independently controllable electrical zones: the shower head region and the edge ring region. Each zone has its own voltage control, enabling independent adjustment of plasma processing parameters without requiring complete redesign of the chamber structure.
Solution Approach 2:
The edge ring component serves multiple functions: it structures the plasma field, controls deposition at edge regions, and works in conjunction with the shower head for overall process control. This multi-functionality increases controllability without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures improved in-plane uniformity and controllability of silicon deposition on the wafer surface, enhancing the etching process by maintaining uniformity at the central portion while allowing for increased deposition near the edges, thus improving the overall processing efficiency and precision.
Implementation Method 1
supplying a first processing gas containing a first rare gas to the processing chamber; and a first plasma processing for processing the mask positioned at an outer peripheral portion of the target object using plasma of the first processing gas
Implementation Method 2
improved in-plane uniformity and controllability of silicon deposition on the wafer surface
Data Source
AI summary
A target object processing method is provided for processing a target object using a plasma processing apparatus including a processing chamber, a mounting table which is disposed in the processing chamber and on which the target object is mounted, an outer peripheral member disposed around the mounting table, and a first voltage application device configured to apply a voltage to the outer peripheral member. The method comprises preparing the target object having an etching target film and a patterned mask formed on the etching target film, and processing the mask. The step of processing the mask includes supplying a first processing gas containing a first rare gas to the processing chamber, and a first plasma processing for processing the mask positioned at an outer peripheral portion of the target object using plasma of the first processing gas while applying a DC voltage to the outer peripheral member.