Plasma Electrode Gas Segmentation for Uniform Substrate Processing
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Solution Overview
Problem
Existing plasma processing technologies face challenges in achieving uniformity of substrate processing, particularly when the spacing between processing spaces is reduced, leading to non-uniform film formation and etching.
Innovation Solution
A plasma processing apparatus is designed with a configuration that includes a processing chamber, a stage for the substrate, a first electrode for high-frequency power supply, a second electrode forming a plasma generation space, and a dielectric radiation part to ensure uniform gas flow and plasma distribution, thereby maintaining uniformity in substrate processing even with reduced spacing between processing spaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the spacing between processing spaces is reduced, then productivity is improved, but manufacturing precision deteriorates
Solution Approach 1:
The processing chamber is divided into a plasma generation space and a processing space, with gas holes segmented into first gas holes facing the plasma generation space and second gas holes facing the processing space. This segmentation allows independent control of gas supply to each region, enabling uniform film formation even when the spacing between processing spaces is reduced.
Solution Approach 2:
Different regions of the electrode are assigned different functions: the first gas holes supply processing gas to the plasma generation space where plasma is formed, while the second gas holes supply gas to the processing space where film formation occurs. This local differentiation of gas supply paths ensures that each region receives appropriate gas flow for its specific function, maintaining film uniformity despite reduced spacing.
2Productivity
If the spacing between processing spaces is reduced, then productivity is improved, but film uniformity deteriorates
Solution Approach 1:
The gas supply system is segmented into first gas holes and second gas holes with distinct functions. The first gas holes introduce processing gas into the plasma generation space, while the second gas holes supply gas to the processing space. This segmentation ensures stable gas distribution and maintains film composition uniformity even when processing spaces are closely spaced.
Solution Approach 2:
The plasma generation space acts as an intermediary region between the gas supply and the processing space. Processing gas is first introduced into the plasma generation space through the first gas holes, where it is activated by plasma, and then the reactive species are transported to the processing space through the second gas holes. This intermediary mechanism ensures uniform film composition despite reduced spacing between processing spaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved uniformity in substrate processing by ensuring consistent gas supply and plasma distribution, reducing the likelihood of pattern transfer from gas holes to the film, and enhancing production efficiency by allowing for smaller processing space gaps.
Implementation Method 1
a first electrode to which high-frequency power for plasma generation is supplied
Implementation Method 2
a radiation part that is formed of a dielectric and is configured to radiate the high-frequency power into the plasma generation space from a waveguide
Implementation Method 3
has a structure causing a first processing gas to flow in a direction opposite to a direction from the plasma generation space toward the processing space, to supply the first processing gas to the plasma generation space
Implementation Method 4
a radiation part that is formed of a dielectric and is configured to radiate the high-frequency power into the plasma generation space from a waveguide formed along an outer periphery of the first electrode
Data Source
AI summary
There is a plasma processing apparatus comprising: a processing chamber that has a stage on which a substrate is placed; a first electrode to which high-frequency power for plasma generation is supplied; a second electrode that faces the first electrode and is configured to form a plasma generation space between the first electrode and the second electrode; and a radiation part that is formed of a dielectric and is configured to radiate the high-frequency power into the plasma generation space from a waveguide formed along an outer periphery of the first electrode, wherein the second electrode is configured to form a processing space between the stage and the second electrode, and has a structure causing a first processing gas to flow in a direction opposite to a direction from the plasma generation space toward the processing space, to supply the first processing gas to the plasma generation space.