Plasma Electrode Power Feeding for Uniform High-Frequency Processing
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Solution Overview
Problem
Plasma processing apparatuses face challenges in achieving high in-plane uniformity of plasma density and electric field distribution, especially at higher frequencies, leading to uneven plasma generation and processing effects.
Innovation Solution
A plasma processing apparatus with a vacuum-exhaustible container and electrodes, featuring multiple power feeding portions connected to the electrode's periphery, where high-frequency power is periodically applied through these portions to maintain uniform voltage distribution and plasma generation, using a control unit to manage the power application.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the frequency of the high frequency applied to the electrode is increased to increase plasma density, then plasma density is improved, but standing wave is easily generated on the surface of the electrode leading to uneven electric field distribution
Solution Approach 1:
The power supply rod is divided into a central portion and a plurality of outer peripheral portions, with separate high-frequency power supply connections to each region. This segmentation allows independent control of power distribution to different areas of the electrode, enabling suppression of standing waves while maintaining high plasma density through optimized frequency and power allocation to each segment.
2Stability of the object's composition
If a power supply rod and conductive member are installed to make plasma generation distribution uniform, then plasma uniformity is improved, but device complexity increases
Solution Approach 1:
The power supply rod serves multiple functions: it acts as both the high-frequency power transmission conductor and the plasma generation electrode. By integrating these functions into a single component rather than using separate power supply rods and electrodes, the invention reduces structural complexity while maintaining the ability to achieve uniform plasma generation distribution through divided power supply connections.
3Stability of the object's composition
If the power supply rod is divided into central portion and outer peripheral portions with distributed high-frequency power supply, then plasma generation distribution is controlled, but device complexity increases
Solution Approach 1:
The central portion and outer peripheral portions of the power supply rod are merged into a single integrated electrode structure, eliminating the need for separate power supply rods and conductive members. This merging approach simplifies the overall device structure while maintaining distributed power supply capability through multiple connection points on the unified power supply rod, achieving plasma generation distribution control with reduced complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the generation of plasma with high in-plane uniformity, improving the uniformity of plasma processing effects such as etching and film deposition by controlling the high-frequency power application to the power feeding portions.
Implementation Method 1
a high-frequency power supply configured to supply high-frequency power to the electrode through the plurality of power feeding portions
Implementation Method 2
plasma of a processing gas is formed by introducing the processing gas into the chamber, and simultaneously, applying a high frequency to one electrode
Data Source
AI summary
A plasma processing apparatus includes a vacuum-exhaustible processing container, an electrode installed in the processing container, a plurality of power feeding portions connected to a peripheral portion of a back surface of the electrode, a high-frequency power supply configured to supply high-frequency power to the electrode through the plurality of power feeding portions, and a control unit. The control unit is configured to control the plasma processing apparatus to periodically apply the high-frequency power to each of the plurality of power feeding portions.