Plasma Emission Analysis for Semiconductor Etching Control
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Solution Overview
Problem
Existing semiconductor etching processes face challenges in stabilizing etching results due to variations in optical emission spectroscopy data when adjusting processing conditions, as previous methods do not account for changes in wavelength and time selections.
Innovation Solution
An analysis method that acquires and evaluates plasma light-emission data at multiple wavelengths and times under different etching conditions to identify optimal wavelength and time combinations for adjusting etching processing conditions, ensuring stabilization of etching results.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If wavelength and time are selected from OES data for etching process control, then etching process control is enabled, but variation occurs in OES data when etching processing condition is adjusted
Solution Approach 1:
The patent changes the parameters used for process control from fixed wavelength and time points to dynamic parameters that adapt when process conditions change. The system selects new wavelength and time combinations based on current plasma conditions, allowing the control parameters to transform with the process state rather than remaining static, thus maintaining reliability across different operating conditions.
Solution Approach 2:
The patent introduces dynamic selection of wavelength and time parameters based on real-time plasma conditions. Instead of using fixed parameters, the system continuously adapts the selected parameters according to the current etching process state, making the control system flexible and responsive to condition changes, thereby preventing OES data variation issues.
2Ease of manufacture
If fixed wavelength and time are used for OES measurement, then measurement simplicity is maintained, but suitable wavelength and time cannot be selected when process conditions change
Solution Approach 1:
The system transitions from static fixed wavelength and time selection to dynamic parameter selection that automatically adapts to changing process conditions. The control unit continuously monitors plasma state and adjusts the selected wavelength and time parameters accordingly, maintaining both simplicity of operation and adaptability to different etching conditions.
Solution Approach 2:
The patent implements a feedback mechanism where OES data is continuously measured and analyzed to determine optimal wavelength and time parameters. The system uses this feedback information to dynamically adjust parameter selection, ensuring that the most suitable parameters are always chosen for current process conditions while maintaining automated control.
3Device complexity
If OES data variation is not considered in wavelength and time selection, then selection process is simplified, but etching processing result stabilization fails
Solution Approach 1:
The patent addresses the stabilization problem by changing how parameters are selected - instead of using fixed or arbitrarily chosen wavelength and time values, the system dynamically selects parameters based on actual plasma conditions and OES data characteristics. This ensures that parameter selection accounts for data variation, improving etching result stability without excessive complexity.
Solution Approach 2:
The system performs preliminary analysis of OES data to identify suitable wavelength and time parameters before using them for process control. By pre-evaluating data characteristics and selecting appropriate parameters in advance, the system prepares optimal control parameters that account for potential variations, thereby ensuring stable etching results.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the selection of suitable wavelengths and times for controlling etching processes, thereby stabilizing the etching results by considering variations in OES data, leading to improved process control.
Implementation Method 1
an optical emission spectroscopy unit (: OES) is mounted on a plasma-used etching processing apparatus so that the light emitted from the plasma can be monitored
Implementation Method 2
a substance is brought into its ionized state (i.e., its plasma state)
Data Source
AI summary
There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.