Plasma Enhanced Thermal Evaporator for CIGS Solar Cells
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Solution Overview
Problem
Current manufacturing processes for copper indium gallium selenium (CIGS) type solar cells face challenges in implementing an efficient inline continuous production process, leading to issues with selenization uniformity and high production costs.
Innovation Solution
The method involves forming a large molecule processing gas from a source material, which is then flowed through a gas distribution showerhead into a processing chamber where it is either plasma-ignited, electrically biased, or exposed to a remote plasma source to generate small molecule processing gases that react with the substrate to form a semiconductor film, improving CIGS film formation and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If thermal evaporation is used to form CIGS films, then film formation is achieved, but temperature requirements are high and uniformity is poor
Solution Approach 1:
The patent changes the physical state and reactivity parameters of selenium by using plasma activation. Instead of thermal evaporation, the invention uses plasma-enhanced chemical vapor deposition where selenium is delivered as a reactive plasma species, enabling film formation at lower temperatures with improved uniformity and phase control.
Solution Approach 2:
The invention utilizes plasma phase transitions to activate selenium. By transitioning selenium from a simple vapor phase to a plasma phase with higher reactivity, the process achieves better film uniformity and phase control at reduced temperatures, resolving the contradiction between temperature requirements and film quality.
2Reliability
If conventional selenization process is used, then CIGS films are formed, but phase uniformity is poor and device yield is low
Solution Approach 1:
The patent changes the reactivity parameters of selenium by using plasma activation. This enables better control over the selenization reaction, improving both phase uniformity and device yield by ensuring complete and uniform reaction across the substrate surface.
Solution Approach 2:
The invention introduces plasma as an intermediary to enhance the selenization process. The plasma acts as a mediator that activates selenium and facilitates uniform reaction with the CIG layer, improving both phase uniformity and device yield simultaneously.
3Productivity
If inline continuous production is implemented, then substrate throughput is improved, but selenization uniformity deteriorates
Solution Approach 1:
The patent implements continuous plasma-enhanced selenization in an inline production environment. The plasma source continuously activates selenium vapor as it flows over the substrate, maintaining uniform reaction conditions throughout the continuous process, thus preserving selenization uniformity while achieving high substrate throughput.
4Manufacturing precision
If high temperature thermal enhancement is used, then CIGS phase formation is improved, but energy consumption increases and cost of ownership rises
Solution Approach 1:
The patent changes the activation method from thermal to plasma-based. By using plasma-enhanced chemical vapor deposition, the process achieves superior CIGS phase formation at lower temperatures, significantly reducing energy consumption and lowering the cost of ownership while maintaining or improving film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the formation and uniformity of the CIGS phase at lower temperatures, reducing the need for thermal enhancement and lowering the cost of ownership by improving device yield and substrate throughput in continuous inline production.
Implementation Method 1
igniting a plasma from the large molecule processing gas
Implementation Method 2
igniting a plasma from the large molecule processing gas, generating a small molecule processing gas with the plasma
Implementation Method 3
electrically biasing the showerhead to increase the energy level of the large molecule processing gas within the processing area without igniting a plasma in the processing area
Implementation Method 4
evaporating a source material to form a large molecule processing gas
Data Source
AI summary
The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation.