Plasma-Activated Epitaxial Deposition for Low-Temperature Substrate Processing
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Solution Overview
Problem
Existing selective epitaxy processes face challenges in maintaining selectivity due to uncontrolled deposition and etching reactions, particularly at high temperatures, which can lead to uncontrolled nitridation and thermal issues on substrates, and require precise control of chemical concentrations and temperatures.
Innovation Solution
A substrate processing apparatus with a processing unit that activates reaction gases, including a heater and plasma generation member, to perform epitaxial deposition and cleaning processes, while maintaining a controlled environment through a gas supply and exhaust system to manage reaction rates and prevent thermal damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high reaction temperature (about 800°C or 1,000°C) is used in selective epitaxy process, then deposition reaction rate is improved, but uncontrolled nitridation reaction and thermal damage on substrate occur
Solution Approach 1:
The patent changes the reaction temperature parameter from conventional high temperature (800-1000°C) to low temperature (400-700°C), and introduces plasma activation to compensate for the reduced thermal energy, thereby achieving fast deposition without thermal damage
Solution Approach 2:
The patent replaces thermal activation (heat) with plasma activation (electromagnetic energy) to activate reaction gases, substituting the conventional thermal field with a plasma field to enable low-temperature epitaxial growth
2Manufacturing precision
If chemical concentration and reaction temperature are adjusted to maintain selectivity, then deposition selectivity is improved, but device complexity and process control difficulty increase
Solution Approach 1:
The patent uses plasma to automatically activate reaction gases, creating a self-sustaining reaction environment where the plasma provides the necessary activation energy, reducing the need for complex external control of chemical concentrations and temperatures
3Reliability
If conventional thermal activation method is used, then reaction gas activation is achieved, but thermal damage and limited process flexibility occur
Solution Approach 1:
The patent fundamentally changes the activation method from thermal to plasma, enabling process temperatures to be lowered from 800-1000°C to 400-700°C, thereby expanding process flexibility and adaptability
Solution Approach 2:
The patent substitutes thermal activation with plasma activation, replacing the thermal field with an electromagnetic field to activate reaction gases, achieving reliable gas activation without thermal damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enables precise control over epitaxial deposition and etching processes, improving selectivity and reducing thermal issues, thereby enhancing the quality of epitaxial layers formed on substrates without the limitations of high reaction temperatures.
Implementation Method 1
a plasma generation member disposed on one of a side portion and an upper portion of the external reaction tube, the plasma generation member generating plasma to perform a cleaning process on the substrates
Implementation Method 2
a heater disposed on one of a side portion and an upper portion of the external reaction tube, the heater heating the process space to perform an epitaxial deposition process on the substrates
Data Source
AI summary
Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to substrates is performed includes a lower chamber having an opened upper portion, the lower chamber having a passage, through which the substrates are accessible, in a side thereof, an external reaction tube closing the opened upper portion of the lower chamber to provide a process space in which the process is performed, a substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position at which the substrates are stacked within the substrate holder and a process position at which the process with respect to the substrates is performed, a gas supply unit supplying a reaction gas into the process space, and a processing unit disposed outside the external reaction tube to activate the reaction gas, thereby performing the process with respect to the substrates.