Plasma Etching with Acoustic Wave Gas Density Control
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Solution Overview
Problem
The existing semiconductor etching technologies are limited by the minimum pulse period required for stabilizing gas distribution in the etching chamber, which constrains the improvement of reaction speeds in plasma etching processes.
Innovation Solution
A plasma etching apparatus and method that incorporates a high-frequency gas pulse function, utilizing a plasma source generator, bias generator, and acoustic wave generator to control the density of reactive gases through acoustic waves, thereby reducing stabilization time and enhancing etching efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas pulsing method is used to control amount of ions and reactive gases, then etching profile of contact hole is improved, but reaction speed is limited by minimum pulse period
Solution Approach 1:
The patent applies periodic action by using pulsed plasma source and bias instead of continuous operation. The plasma source pulse and bias pulse are applied in a periodic manner with optimized timing, enabling precise control of ion and reactive gas amounts during etching while maintaining high reaction speeds through reduced pulse periods that overcome the minimum pulse period limitation of conventional gas pulsing methods
Solution Approach 2:
The patent implements dynamics by making the plasma source and bias conditions variable and adjustable in real-time. The plasma source generator and bias generator can dynamically change their output parameters including pulse width, duty cycle, and amplitude, allowing the system to adapt to different etching requirements and achieve both precise profile control and high reaction speeds
2Productivity
If gas flow rate is controlled to improve reaction speed, then etching efficiency is improved, but stabilization time of injection gas increases
Solution Approach 1:
The patent applies preliminary action by pre-establishing the plasma environment before the actual etching process. The plasma source pulse is activated beforehand to create a stable plasma state, and the bias pulse is pre-configured to ensure immediate ion control when the etching gas is introduced, thereby reducing the stabilization time required for injection gas while maintaining high etching efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach shortens the stabilization time of injection gas and improves reaction speeds by controlling gas distribution and density within the plasma chamber, enabling high-frequency etching and deposition conversion functions.
Implementation Method 1
The acoustic wave generator is configured to generate an acoustic wave having a wavefront with a first direction parallel to the wafer and to control a density of a reactive gas of the plasma
Implementation Method 2
The plasma source generator is configured to generate the plasma source pulse
Implementation Method 3
The bias generator is configured to generate the bias pulse
Data Source
AI summary
The present disclosure provides plasma etching apparatuses and operating methods of the plasma etching apparatuses. In some embodiments, a plasma etching apparatus includes a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. The processing chamber is configured to receive etching gas, and to etch a wafer using plasma that has been formed according to a plasma source pulse and a bias pulse. The a plasma source generator is configured to generate the plasma source pulse. The bias generator is configured to generate the bias pulse. The acoustic wave generator is configured to generate an acoustic wave having a wavefront with a first direction parallel to the wafer and to control a density of a reactive gas of the plasma.