Plasma Etching Chamber Heating for High-Selectivity Warm Etching
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Solution Overview
Problem
Conventional cryogenic etching processes face challenges in maintaining high selectivity, high orientation, and high aspect ratio etching while avoiding thermal stress and contamination due to low-temperature environments, which are difficult to manage and can damage substrates.
Innovation Solution
An etching processing apparatus and method using a chamber with a cooling unit to cool substrates to -50° C to 50° C and a chamber heating unit to heat the chamber wall above the boiling point of a fluorocarbon or hydrofluorocarbon etching precursor, preventing adsorption and contamination, and generating plasma for etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cryogenic etching is performed at -100°C or lower, then high selectivity and high orientation are achieved, but thermal stress damages the substrate and equipment complexity increases
Solution Approach 1:
The patent changes the temperature parameter from conventional cryogenic (-100°C or lower) to a higher range (-50°C to 50°C) while using liquid etching precursors with boiling points of 0°C or higher. This parameter change allows achieving high etching selectivity and orientation without subjecting the substrate to extreme thermal stress that causes damage.
Solution Approach 2:
The patent utilizes phase transitions of liquid etching precursors (fluorocarbon or hydrofluorocarbon compounds with boiling points of 0°C or higher) that evaporate at or near room temperature. This phase transition mechanism enables the etching process to function at higher temperatures compared to conventional cryogenic methods, eliminating thermal stress damage while maintaining etching performance.
2Manufacturing precision
If conventional cryogenic etching is performed at low temperature, then high aspect ratio etching is achieved, but surrounding moisture or foreign matter is adsorbed to the substrate causing contamination
Solution Approach 1:
The patent raises the processing temperature from conventional cryogenic levels to -50°C to 50°C, which eliminates the cold trap effect that causes adsorption of moisture and foreign matter. This parameter change prevents substrate contamination while maintaining the capability to achieve high aspect ratio etching through the use of liquid precursors and plasma generation.
3Manufacturing precision
If conventional cryogenic etching is performed, then high selectivity is achieved, but equipment and environment requirements become difficult to realize
Solution Approach 1:
The patent changes the temperature parameter to a higher range (-50°C to 50°C) that is easier to maintain and control compared to conventional cryogenic temperatures of -100°C or lower. This parameter change simplifies equipment requirements and environmental controls while maintaining high etching selectivity through the use of liquid precursors with appropriate boiling points.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for high selectivity and high aspect ratio etching at temperatures higher than conventional cryogenic etching, reducing thermal stress and contamination risks, and simplifying equipment and environment requirements.
Implementation Method 1
a cooling unit configured to cool the substrate support unit
Implementation Method 2
a gas supply unit configured to evaporate an etching precursor existing as a liquid at room temperature and supply a gas of the evaporated etching precursor into the chamber
Implementation Method 3
a plasma generation unit configured to excite the gas supplied into the chamber
Implementation Method 4
a chamber heating unit configured to heat a wall of the chamber... The chamber heating unit may heat the wall of the chamber to a temperature higher than the boiling point of the etching precursor
Data Source
AI summary
An etching processing apparatus and an etching processing method using a liquid fluorocarbon or a liquid hydrofluorocarbon precursor are proposed, the etching processing apparatus and etching processing method capable of achieving almost the same effect as cryogenic etching even at a relatively high temperature compared to cryogenic etching. In addition, an etching processing apparatus and an etching processing method capable of solving process problems that may arise due to a liquid precursor and a low temperature may be provided.