Plasma Etching Apparatus Gas Supply Segmentation
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Solution Overview
Problem
In plasma etching of porous films, radicals penetrate into the film's pores, causing damage, and existing technologies struggle to control the pressure of gases causing capillary condensation in the gas supply system, leading to unintended liquefaction and flow instability.
Innovation Solution
A plasma processing apparatus with a gas supply system that includes a chamber, a stage, and a plasma generator, featuring a refrigerant flow channel and controlled gas passages to manage the pressure and liquefaction of gases, using a first gas for capillary condensation and a second gas for etching, with valves and heaters to regulate flow and prevent liquefaction in the supply system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the pressure of the first gas is increased to cause capillary condensation in the porous film, then the radical penetration is restrained, but the gas is liquefied in the flow passage unintentionally
Solution Approach 1:
The gas supply system is divided into separate flow passages: a first flow passage for the second gas (etching gas) and a second flow passage for the first gas (capillary condensation gas). This segmentation allows independent pressure control for each gas, enabling the first gas to be supplied at high pressure to the chamber for capillary condensation while maintaining stable phase in the supply system through separate pathway management.
Solution Approach 2:
A gas discharging apparatus is introduced as an intermediary component connected to the second flow passage. This apparatus actively discharges the first gas from the flow passage, maintaining pressure balance and preventing unintended liquefaction in the supply system while still allowing sufficient pressure to reach the chamber for capillary condensation protection.
2Object-affected harmful factors
If the flow rate of the first gas is increased to enhance capillary condensation effect, then the porous film protection is improved, but the pressure instability in the flow passage increases
Solution Approach 1:
The flow passages are segmented into separate systems, with the second flow passage dedicated to the first gas and equipped with its own flow rate controller and gas discharging apparatus. This allows independent optimization of flow rate for capillary condensation effect while the discharging apparatus compensates for pressure fluctuations, maintaining supply system reliability.
Solution Approach 2:
The gas discharging apparatus operates in response to pressure conditions in the second flow passage, providing a feedback mechanism that adjusts gas discharge to maintain stable flow conditions. This feedback control prevents pressure buildup that would cause liquefaction while ensuring sufficient flow rate reaches the chamber for effective porous film protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively prevents radical penetration into the porous film by maintaining the first gas in a liquid state within the film, while adjusting pressure to prevent liquefaction in the gas supply system, thereby reducing damage to the film during etching.
Implementation Method 1
a first gas causing capillary condensation thereof in the porous film... the first gas is liquefied in the porous film due to capillary condensation
Implementation Method 2
a flow channel for a refrigerant is formed in the stage... providing a first flow passage connecting a source of the second gas to the chamber
Implementation Method 3
a plasma generator configured to generate plasma of a gas supplied to the chamber... a second gas for etching the porous film
Data Source
AI summary
A plasma processing apparatus of an embodiment includes a chamber body, a stage, a gas supply system, and a plasma generator. The chamber body provides an inner space thereof as a chamber. The stage is provided in the chamber. In the stage, a flow channel for a refrigerant is formed. The gas supply system is configured to supply a first gas causing capillary condensation thereof in a porous film and a second gas for etching a porous film to the chamber. The plasma generator is configured to generate plasma of a gas supplied to the chamber. The gas supply system provides a first flow passage connecting a source of the second gas to the chamber, a second flow passage connecting a source of the first gas to the first flow passage, and a third flow passage connecting a gas discharging apparatus to the second flow passage.