Plasma Etching Interconnection Wells Multi-Substrate Stacks
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Solution Overview
Problem
Existing methods for producing interconnections or vias in multi-layer components require multiple steps, increasing manufacturing costs and complexity due to the need for successive passage regions through substrates or insulating layers.
Innovation Solution
A method that uses plasma etching to create interconnection wells passing through material-free zones, allowing for simultaneous production and filling of multiple interconnections in a single step, with conductive material filling to connect buried and surface contact zones across substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If successive steps are used to produce passage regions through substrates and insulating layers for each interconnection layer, then interconnections can be formed between multiple layers, but the number of manufacturing steps increases and production cost increases
Solution Approach 1:
The patent merges multiple separate etching operations into a single plasma etching step that simultaneously creates passage regions through multiple substrates and insulating layers. The plasma etching process penetrates through the stack of substrates (first substrate, second substrate, third substrate) and insulating layers (first insulating layer, second insulating layer, third insulating layer) in one operation, forming all necessary interconnection passages without requiring successive individual steps for each layer.
Solution Approach 2:
The plasma etching process serves multiple functions simultaneously: it creates passage regions for first interconnection, second interconnection, and third interconnection; it penetrates through multiple substrates and insulating layers; and it forms the structural basis for multiple conductive vias in a single operation. This multi-functional approach eliminates the need for separate specialized steps for each interconnection layer.
2Reliability
If multiple successive steps are performed to create passage regions and fill them with conductive material for each interconnection layer, then complete interconnections are formed, but manufacturing time and production cost increase
Solution Approach 1:
The patent combines the creation of all passage regions for multiple interconnection layers into a single plasma etching step. Instead of performing separate etching and filling operations for each interconnection layer (first, second, and third connections), the process simultaneously forms all passage regions through the multi-substrate stack, followed by a single filling operation that creates all conductive vias in one go, thereby maximizing manufacturing throughput.
Solution Approach 2:
The plasma etching step performs preliminary action by pre-forming all necessary passage regions through multiple substrates and insulating layers before the filling step. This preliminary creation of the complete three-dimensional passage network allows subsequent conductive material filling to proceed efficiently in a single operation, rather than requiring multiple sequential fill operations for each interconnection layer.
3Manufacturing precision
If passage regions are made through each substrate and insulating layer separately for each interconnection layer, then precise control of each interconnection is achieved, but the manufacturing process becomes more complex and costly
Solution Approach 1:
The patent merges multiple precision etching operations into a single plasma etching process that simultaneously creates all passage regions. The plasma etching methodology inherently provides precise control over passage region formation as it penetrates through the stack of substrates and insulating layers, eliminating the need for multiple separate precision operations while maintaining positioning accuracy for first, second, and third interconnections.
Solution Approach 2:
The plasma etching process serves as a universal tool that handles the creation of all passage regions for multiple interconnection layers with a single operation. This multi-functional approach maintains manufacturing precision for each individual interconnection while simplifying the overall manufacturing process, as the same plasma etching mechanism adapts to create passages through different materials (substrates and insulating layers) simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process by reducing the number of steps required, lowering costs, and enabling efficient electrical connections between multiple layers in a single operation, while maintaining the section and integrity of the interconnection wells.
Implementation Method 1
comprises a step of producing by plasma etching from said surface of the stack at least one first interconnection well
Implementation Method 2
comprises a step of filling the interconnection well with a conductive material to form a conductive via
Data Source
Figure 1a~1f
Figure 2a~2f
Figure 2g~3f
AI summary
The Invention relates to a method for creating at least one interconnection well for enabling the creation of a conductive via between at least two connection layers of a component comprising a stack of at least one first and a second substrate electrically insulated from each other, the method comprising defining at least one surface contact zone of a surface connection layer on a surface of the stack and at least one first contact zone (41) embedded in the stack from a first embedded connection layer (4) of the first substrate, characterized in that at least one material-free zone (51, 61) is disposed between the first (1) and the second (2) substrates and in that it comprises a step of creating by plasma etching from said surface (2',3') of the stacking of at least one first interconnecting well (82) passing through at least the second substrate (2) extending between the surface contact zone (82", 85") and the first buried contact zone (41) and passing through the material-free zone (51, 61), as well as a first layer (5) which covers the first buried connection layer (4).