Plasma Substrate Etching with Base Removal of Metal-Containing Layers
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Solution Overview
Problem
Current substrate processing methods face challenges in effectively etching regions with different materials while forming and removing metal-containing layers, particularly in achieving precise control over the etching process to expose underlying silicon regions without damaging the substrate.
Innovation Solution
A substrate processing method involving a plasma processing apparatus that etches a second region with a metal-containing layer on a first silicon region using a gas mixture including halogen and metal, followed by removal of the metal-containing layer using a base, allowing for precise control and minimal damage to the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma etching is performed using a mixed gas of WF6 and C4F8 to etch the insulating film, then the etching process can be conducted, but metal-containing layers are formed on the silicon regions requiring additional removal steps
Solution Approach 1:
The invention extracts and removes the harmful metal-containing layers formed during plasma etching using a dedicated removal step with base solution, separating the etching function from the metal layer formation, thereby enabling precise control over the etching process while eliminating unwanted deposits
Solution Approach 2:
The invention changes the chemical parameters by introducing base solution with specific pH values (typically pH 7-14) to selectively remove metal-containing layers formed during plasma etching, allowing control over the removal process through pH adjustment and contact time variation
2Manufacturing precision
If the metal-containing layer is formed on the first region during etching of the second region, then the etching can proceed, but the metal-containing layer must be subsequently removed with base
Solution Approach 1:
The invention performs preliminary formation of the metal-containing layer during the etching process itself, which then serves as a protective or selective layer, and subsequently removes it with base solution to achieve the desired precise etching pattern without requiring separate protective layer formation steps
3Manufacturing precision
If plasma processing is used to etch regions with different materials, then selective etching can be achieved, but control over exposing underlying silicon regions without damage is challenging
Solution Approach 1:
The invention introduces base solution as an intermediary substance that selectively removes metal-containing layers from specific regions after plasma etching, allowing precise control over which areas are exposed without directly exposing the silicon substrate to harsh plasma conditions that could cause damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient etching and removal of metal-containing layers, ensuring accurate exposure of underlying silicon regions with reduced damage, thereby improving the precision and effectiveness of the substrate processing.
Implementation Method 1
etching the second region while forming a metal-containing layer on the first region, by a plasma generated from a processing gas including halogen and metal
Implementation Method 2
removing the metal-containing layer with a base
Data Source
AI summary
A substrate processing method includes: (a) providing a substrate including a first region containing a first material including silicon and a second region containing a second material different from the first material; (b) etching the second region while forming a metal-containing layer on the first region, by a plasma generated from a processing gas including halogen and metal; (c) removing the metal-containing layer with a base.