Plasma Etching with Deposition Layer for Opening Dimension Control
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Solution Overview
Problem
Existing techniques fail to effectively control the dimensions of openings in plasma processing, particularly in the removal of extensions from mask patterns during etching processes.
Innovation Solution
A plasma processing method involving the formation of a deposition layer on the mask layer and its partial etching using a first process gas to reduce the thickness, followed by etching the etching target layer, utilizing gases like halogen-containing and oxygen/hydrogen/nitrogen-based gases to control the depth of etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a mask layer is used to define openings during plasma etching, then the pattern transfer is achieved, but extensions form on the side surface that cannot be effectively removed
Solution Approach 1:
A deposition layer is formed on the mask layer before the etching process. This preliminary action creates a protective coating that prevents extension formation during etching, and provides a controlled interface for subsequent thickness reduction processing to precisely define the opening dimensions.
Solution Approach 2:
The deposition layer acts as an intermediary between the mask layer and the etching environment. It mediates the interaction by providing a controllable interface that prevents direct harmful interaction between the mask layer side surface and the plasma, thereby preventing extension formation while allowing precise dimensional control.
2Manufacturing precision
If the mask layer side surface is directly exposed during etching, then the process is simple, but the opening dimensions cannot be precisely controlled
Solution Approach 1:
The deposition layer is formed in advance on the mask layer before etching. This preliminary deposition step enables precise control of the opening dimensions by controlling the deposition thickness, while the overall process remains integrated and efficient.
Solution Approach 2:
The thickness of the deposition layer is precisely controlled through parameter adjustment during the deposition process. By changing deposition parameters such as gas flow rate, pressure, and time, the opening dimensions can be precisely controlled without significantly increasing process complexity.
3Productivity
If plasma etching is performed without a deposition layer, then the etching speed is fast, but the extension removal is ineffective
Solution Approach 1:
The deposition layer serves as an intermediary that enables both fast etching and effective extension removal. It provides a controlled interface that allows the plasma to efficiently etch through the layer while simultaneously preventing extension formation on the mask layer, achieving both productivity and precision.
Solution Approach 2:
The structure consists of a composite of the mask layer and deposition layer. This composite structure combines the advantages of both layers: the mask layer provides pattern definition while the deposition layer provides controlled etching and extension prevention, achieving both high etching speed and precise extension removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows precise control over the dimensions of openings by reducing the thickness of the deposition layer and removing extensions, enhancing the accuracy and quality of the etching process.
Implementation Method 1
at least partially etching the deposition layer using plasma generated from a first process gas
Implementation Method 2
The first process gas contains a gas for etching the etching target layer
Data Source
AI summary
A technique can control the dimensions of an opening. A plasma processing method includes (a) providing a substrate including an etching target layer, and a mask layer located on an upper surface of the etching target layer and having a side surface defining at least one opening on the upper surface of the etching target layer and an extension from the side surface to at least a portion of the upper surface of the etching target layer, (b) forming a deposition layer on at least the side surface of the mask layer, and (c) at least partially etching the deposition layer using plasma generated from a first process gas to reduce a thickness of the deposition layer. The first process gas contains a gas for etching the etching target layer, and (c) is performed until the etching target layer is partially etched in a depth direction to remove the extension.