Plasma Etching with Cyclic Organic Film Formation for Fine Patterns
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Solution Overview
Problem
Existing techniques for forming fine patterns in electronic device manufacturing face challenges in achieving precise film formation and etching, particularly in controlling film thickness and selectivity, especially with the miniaturization of devices, requiring advanced methods for atomic layer-level control.
Innovation Solution
A method involving the formation of an organic film on a substrate using a first gas containing an organic compound, followed by modification with a second gas and energy to create a precursor layer, which is then etched using plasma, allowing for precise control of film thickness and selectivity, with the process occurring in a reduced pressure atmosphere.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional dry etching is performed to form fine patterns, then etching can be achieved, but film thickness control and selectivity are insufficient for atomic layer-level precision
Solution Approach 1:
The film formation process is segmented into multiple sequential steps: precursor layer formation using organic compound gas, modification using second gas with energy supply, and repeated cycles. This segmentation enables atomic layer-level control of film thickness by precisely controlling the number of cycles and gas flow rates, achieving the required manufacturing precision without excessive overall process complexity
Solution Approach 2:
A precursor layer is formed in advance using organic compound gas before the actual etching process. This preliminary action creates a controlled organic film that serves as a foundation for subsequent etching, enabling precise thickness control and improved selectivity. The precursor layer formation is performed under specific reduced pressure conditions to ensure atomic layer-level precision
2Manufacturing precision
If photoresist pattern is formed and silicon oxide film is deposited conformally, then fine pattern formation is enabled, but the process requires multiple steps including spacer and polymer film formation
Solution Approach 1:
The invention merges the precursor layer formation and modification steps into a unified organic film formation process that occurs in a single reactor under reduced pressure. By combining these steps and optimizing gas flow rates and energy supply, the process achieves conformal film deposition with atomic layer-level control, reducing the number of separate process steps while maintaining high pattern formation precision
Solution Approach 2:
The process utilizes parameter changes including reduced pressure conditions, controlled gas flow rates of organic compound and modifying gases, and energy supply parameters to achieve conformal film formation. These parameter optimizations enable precise control of film thickness and morphology, achieving high pattern formation precision with a streamlined process
3Stability of the object's composition
If organic film is formed using plasma polymerization, then conformal coverage is achieved, but control of film thickness at atomic layer level is difficult
Solution Approach 1:
The film formation employs periodic action through repeated cycles of precursor layer formation and modification steps. Each cycle deposits a controlled amount of material, and by adjusting the number of cycles and gas flow rates, atomic layer-level thickness control is achieved while maintaining conformal coverage. The periodic cycling allows precise accumulation of film thickness
Solution Approach 2:
The process incorporates feedback control through monitoring and adjustment of gas flow rates, pressure, and energy supply parameters during film formation. This feedback mechanism enables real-time control of deposition rate and film quality, achieving both conformal coverage and atomic layer-level thickness precision by adjusting parameters based on process conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of conformal organic films with controlled thickness, facilitating precise etching and pattern formation, enhancing the precision and efficiency of substrate processing for electronic devices.
Implementation Method 1
supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate
Implementation Method 2
supplying energy to the precursor layer and/or the second gas to modify the precursor layer
Implementation Method 3
supplying energy to the precursor layer and/or the second gas
Implementation Method 4
etching the etching region using plasma generated from a processing gas through the patterned region
Data Source
AI summary
An apparatus for processing a substrate for processing a substrate includes: one or more processing chambers, a plasma generator, and a controller. The controller causes (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region through the patterned region using plasma generated from a processing gas. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer. In (b2), the precursor layer is modified by plasma generated from the second gas.