Plasma Etching with Silicon-Containing Layer for Oxidation Control
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Solution Overview
Problem
Existing plasma etching methods struggle to effectively transfer patterns onto films while minimizing the width of openings in masks, particularly when a silicon oxide layer is present, as they often lead to oxidation and uneven etching.
Innovation Solution
A method involving the formation of a silicon-containing layer with silicon, carbon, and nitrogen on a substrate, using a precursor gas and controlled plasma processing, followed by a depressurized environment to prevent oxidation and ensure precise etching without exposing the layer to the atmosphere.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a silicon oxide layer is formed on the substrate before plasma etching, then the width of mask openings is reduced, but oxidation occurs and etching uniformity deteriorates
Solution Approach 1:
A silicon-containing layer is formed on the mask before plasma etching as a preliminary protective action. This layer prevents oxidation of the mask during subsequent processing steps, thereby maintaining etching uniformity while still allowing precise control of mask opening width
Solution Approach 2:
The substrate is kept in a depressurized environment from the start of silicon-containing layer formation through the plasma etching process. This inert vacuum environment prevents oxidation of both the mask and etched surfaces, resolving the contradiction between achieving narrow mask openings and maintaining etching uniformity
2Reliability
If the substrate is exposed to atmosphere during processing, then oxidation occurs, but maintaining depressurized environment requires complex vacuum systems
Solution Approach 1:
Multiple processing steps (silicon-containing layer formation, plasma etching, and oxidation prevention) are merged into a single continuous depressurized environment. This eliminates the need for repeated vacuum pumping cycles and simplifies the overall system complexity while ensuring reliable oxidation prevention
Solution Approach 2:
The depressurized environment is maintained continuously from the start of silicon-containing layer formation through plasma etching without interruption or exposure to atmosphere. This continuous vacuum state ensures uninterrupted oxidation prevention while streamlining the processing sequence
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise and controlled etching of films, maintaining the integrity of the silicon-containing layer and reducing oxidation, thereby enhancing the transfer of patterns onto films with improved accuracy and consistency.
Implementation Method 1
The silicon-containing layer is formed by a plasma processing using a precursor gas containing silicon
Implementation Method 2
performing a plasma etching on the film
Data Source
AI summary
An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.