Plasma Etching with Selective Mask Deposition for Smoother Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current plasma processing methods face challenges in achieving high etching selectivity and reducing line edge roughness and line width roughness, particularly with the diversification of materials and complex structures in EUV and DSA lithography techniques, where forming deposition films matching the mask materials is difficult, leading to issues with mask height and pattern edge roughness.
Innovation Solution
A plasma processing method that selectively deposits a deposition film on the mask material by controlling etching parameters to ensure the incubation time of the mask material is shorter than that of the material to be etched, allowing for precise film formation on the mask without depositing on the material to be etched, thereby enhancing selectivity and reducing roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing methods are used, then etching can be performed, but etching selectivity between mask material and material to be etched is insufficient
Solution Approach 1:
A deposition film is formed on the mask material before etching the material to be etched. This preliminary deposition action protects the mask material during subsequent etching processes, maintaining mask height while enabling selective etching of the underlying layer.
Solution Approach 2:
A deposition film serves as an intermediary layer between the mask material and the etching plasma. This intermediate layer provides selective protection to the mask material, allowing differential etching rates between the mask and the material being etched, thereby improving etching selectivity.
2Manufacturing precision
If deposition film formation is attempted on diversified materials, then film coverage may improve, but line edge roughness and line width roughness increase
Solution Approach 1:
The deposition process is optimized to provide localized film formation characteristics. By controlling deposition parameters, the film is formed with appropriate thickness and quality specifically on the mask material surface, while avoiding excessive deposition that would cause roughness on pattern edges.
Solution Approach 2:
Deposition parameters such as temperature, pressure, and gas flow rates are optimized to achieve uniform film formation on diverse mask materials without causing line edge roughness. Parameter adjustments ensure the deposition film forms smoothly on the mask while maintaining pattern fidelity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves etching selectivity and reduces side wall roughness of the mask pattern, enhancing the precision and quality of pattern formation in semiconductor manufacturing.
Implementation Method 1
a plasma processing method of selectively depositing a deposition film on a mask material with respect to a material to be etched
Implementation Method 2
selectively depositing a deposition film on a mask material
Data Source
AI summary
Provided is a plasma processing method capable of improving an etching selectivity of a material to be etched with respect to a mask material and reducing a roughness of a side wall of a mask pattern. The plasma processing method of selectively depositing a deposition film on the mask material with respect to the material to be etched includes controlling an etching parameter so that an incubation time of the mask material is shorter than an incubation time of the material to be etched.