Plasma Etching of Metal-Containing Films With Region-Selective Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing plasma processing methods struggle to selectively remove exposed regions of a metal-containing film while preserving unexposed regions, which is crucial for achieving precise etching patterns in semiconductor manufacturing.
Innovation Solution
A plasma processing method that involves preparing a substrate with an etching target film and a metal-containing film having exposed and unexposed regions. The method includes reforming the metal-containing film using a first plasma formed from a fluorine-containing or oxygen-containing gas and selectively removing the exposed region using a second plasma formed from a different processing gas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing is used to remove metal-containing film, then the film can be removed, but selective removal between exposed and unexposed regions cannot be achieved
Solution Approach 1:
The patent applies preliminary action by performing a reforming treatment on the metal-containing film before the etching process. This reforming treatment modifies the film's properties in advance, creating differential etching resistance between exposed and unexposed regions. The reforming step prepares the film structure beforehand, enabling selective removal during subsequent etching without requiring complex in-process adjustments.
Solution Approach 2:
The patent implements local quality by creating spatially differentiated properties within the metal-containing film. Through the reforming treatment, the exposed regions and unexposed regions acquire different chemical compositions or structures, resulting in locally distinct etching resistances. This allows the same film material to exhibit different behaviors in different locations during the etching process, achieving precise pattern formation.
2Manufacturing precision
If etching resistance is increased for unexposed regions, then selective removal becomes possible, but additional processing steps are required
Solution Approach 1:
The patent merges the reforming treatment and etching processes into an integrated workflow. The reforming step is designed to work in conjunction with the subsequent etching process, where the modifications made during reforming directly enable the selective removal in the next step. This combination reduces the need for separate, independent processing stages and simplifies the overall device architecture.
Solution Approach 2:
The patent employs parameter changes by modifying the chemical or physical parameters of the metal-containing film through the reforming treatment. These parameter changes alter the film's etching resistance characteristics, enabling selective removal. By changing parameters such as film composition, density, or cross-linking degree, the process achieves differential etching behavior without requiring fundamentally different processing equipment or multiple complex stages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively enhances the etching resistance of the unexposed regions, allowing for selective removal of the exposed regions, thereby achieving precise control over the etching process and improving pattern formation in semiconductor manufacturing.
Implementation Method 1
reform the metal-containing film using a first plasma formed from a first processing gas
Implementation Method 2
the first processing gas including either a fluorine-containing gas or an oxygen-containing gas
Implementation Method 3
selectively removing the first region of the reformed metal-containing film with respect to the second region using a second plasma
Implementation Method 4
selectively removing the first region of the reformed metal-containing film
Data Source
AI summary
Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. This method includes: (a) preparing a substrate on a substrate support in the chamber, the substrate including an etching target film and a metal-containing film provided on the etching target film, the metal-containing film including an exposed first region and an unexposed second region; (b) reforming the metal-containing film using a first plasma formed from a first processing gas, the first processing gas including either a fluorine-containing gas or an oxygen-containing gas; and (c) selectively removing the first region of the reformed metal-containing film with respect to the second region using a second plasma formed from a second processing gas.