Plasma Etching Cycles With Sidewall Protection for Opening Control
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Solution Overview
Problem
Existing plasma etching methods struggle to control the lateral expansion of openings in films during the etching process, particularly in forming protective regions on the side wall surfaces to prevent unwanted expansion.
Innovation Solution
A method involving a plasma processing apparatus with temperature-controlled cycles that form a protective region on the side wall surface of the film by altering the substrate temperature during different etching cycles, using a precursor layer that reacts with chemical species to form a protective region simultaneously with film etching, thereby controlling the etching amount in the lateral direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a protective region is formed on the side wall surface to prevent lateral expansion of openings, then the lateral etching control is improved, but the device complexity increases due to additional processing steps
Solution Approach 1:
The patent combines the protective region formation and etching processes into a single integrated step. The precursor layer is deposited on the side wall surface to form the protective region, and then etching is performed through the mask without requiring separate protective region formation and etching steps. This merging reduces device complexity while maintaining manufacturing precision.
Solution Approach 2:
The patent applies preliminary action by forming the precursor layer on the side wall surface before the etching process. This precursor layer serves as the protective region that prevents lateral expansion of openings during etching. The protective region is prepared in advance, allowing the etching process to proceed with precise lateral control.
2Manufacturing precision
If multiple etching cycles with different substrate temperatures are used to control etching amount, then the etching precision is improved, but the processing time increases
Solution Approach 1:
The patent employs periodic action by executing multiple etching cycles with alternating substrate temperatures. Each cycle consists of etching at a first temperature followed by etching at a second temperature. This periodic temperature variation enables precise control of the etching amount while maintaining reasonable processing time through systematic cycling.
Solution Approach 2:
The patent utilizes parameter changes by varying the substrate temperature between different etching cycles. The substrate temperature is changed from a first temperature to a second temperature across different cycles, which directly controls the etching rate and amount. This parameter variation allows precise etching control without requiring excessive processing time.
3Productivity
If the protective region is formed at the same time as etching the organic film, then the process efficiency is improved, but the control over protective region formation becomes more difficult
Solution Approach 1:
The patent merges the protective region formation and organic film etching into a single simultaneous process. The precursor layer is deposited on the side wall surface to form the protective region, and the organic film is etched through the mask in the same processing step. This merging improves process efficiency while the protective region formation is controlled through the precursor layer deposition parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively controls the width of the opening in the film's depth direction by forming a protective region that prevents lateral expansion, allowing precise etching control and maintaining the integrity of the film structure.
Implementation Method 1
plasma is generated from a gas in a chamber. The film of a substrate disposed in the chamber is etched by a chemical species from the plasma.
Implementation Method 2
controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask
Data Source
AI summary
An etching apparatus includes: a chamber; a substrate support disposed in the chamber; one or more heaters disposed in the substrate support; a gas supply; a plasma generator; a controller configured to perform an etching process comprising a plurality of cycles; and a heater controller. Each cycle includes: controlling the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask.