Plasma Etching Substrate Heating for By-Product Sublimation

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Solution Overview

Problem

Existing plasma etching methods struggle with by-product removal due to low substrate temperature maintenance, leading to etching defects and inefficiencies in silicon-containing film processing.

Innovation Solution

A plasma processing apparatus that selectively heats the substrate's surface layer using light irradiation while maintaining the underlying layers at a low temperature, facilitated by a light irradiator and temperature monitoring system, to efficiently remove by-products.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the substrate is maintained at a low temperature during plasma etching, then the etching rate of silicon-containing film is increased, but by-products cannot be efficiently removed

Engineering Contradiction:
Improveetching rateVSAvoidby-product accumulation
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent applies periodic temperature cycling to the substrate during plasma etching. The substrate temperature is alternately adjusted between a first temperature (maintained during plasma generation for efficient by-product removal) and a second temperature (lower temperature that enhances etching rate). This periodic action allows the system to achieve both high etching efficiency and effective by-product removal by switching between optimal temperature conditions for each objective.

Inventive Principle:
Principle #19Periodic action

2Object-generated harmful factors

If the substrate temperature is increased to remove by-products, then by-product sublimation is improved, but the etching rate decreases

Engineering Contradiction:
Improveby-product removalVSAvoidetching rate
Core Design Contradiction:
Object-generated harmful factorsVSProductivity

Solution Approach 1:

The patent implements periodic temperature adjustment where the substrate is alternately heated to a first temperature for by-product sublimation and cooled to a second temperature for enhanced etching rate. This time-varying temperature control strategy enables the system to sequentially achieve by-product removal and high-rate etching, resolving the contradiction between these two opposing requirements.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent employs dynamic temperature control of the substrate during the plasma processing sequence. By making the substrate temperature variable rather than static, the system can adapt to different process requirements at different times - high temperature for by-product removal and low temperature for fast etching - thereby achieving both objectives that would be impossible under constant temperature conditions.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances by-product sublimation and promotes efficient etching by allowing immediate cooling post-process, improving productivity and reducing etching defects.

Implementation Method 1

at least one light source configured to temporarily and periodically irradiate a substrate on the substrate support with light to heat the substrate

Methodology Applied
Scientific EffectLight absorption and heating: Absorption (EM radiation)

Implementation Method 2

a temperature of a surface layer of a substrate is increased during plasma generation in a plasma processing apparatus to efficiently remove a by-product

Methodology Applied
Scientific EffectSublimation: Sublimation

Implementation Method 3

an RF power source configured to supply an RF signal to the antenna in order to generate plasma in the chamber

Methodology Applied
Scientific EffectPlasma generation: Plasma

Implementation Method 4

an antenna disposed above the dielectric window, an RF power source configured to supply an RF signal to the antenna in order to generate plasma

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 5

a substrate support disposed in the chamber and including a coolant passage, a coolant supply configured to supply a coolant maintained at a first temperature to the coolant passage

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250349524A1Plasma processing apparatus and plasma etching method
Publication Date: 2025.11.13 TOKYO ELECTRON LTD
  • US20250349524A1 patent drawing
  • US20250349524A1 patent drawing
  • US20250349524A1 patent drawing

AI summary

Provided is a plasma processing apparatus including: a chamber, a substrate support disposed in the chamber and including a coolant passage, a dielectric window disposed above the substrate support, an antenna, an RF power source to supply an RF signal to the antenna, a coolant supply to supply a coolant maintained at a first temperature to the coolant passage, at least one heater disposed in the substrate support, a heater power source to supply power to the at least one heater, at least one light source, a temperature monitor to monitor a temperature of the substrate on the substrate support, and a controller to control, the temperature monitor, the coolant supply, the heater power source, and/or the at least one light source.