Faraday Shielded Plasma Source for Redeposition Control
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Solution Overview
Problem
The buildup of redeposited material on the chamber walls in plasma processing systems leads to contamination and RF power attenuation, necessitating frequent maintenance, which is costly and disruptive in semiconductor manufacturing.
Innovation Solution
A plasma producing apparatus with a Faraday shield and RF power supply that alternates polarity at low frequencies to shield the chamber interior from redeposited material, using a grounded Faraday shield with vertically aligned slots to prevent horizontal eddy currents and alternating RF power to ensure uniform plasma distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sputter etching is performed to remove material from substrate surface, then material removal and interface quality are improved, but redeposited material accumulates on chamber walls causing contamination and RF power attenuation
Solution Approach 1:
A Faraday shield is introduced as an intermediary component between the substrate and chamber walls. The shield captures redeposited material before it reaches the chamber walls, preventing contamination and RF power attenuation while allowing the sputter etching process to continue effectively
Solution Approach 2:
The patent converts the harmful effect of ion bombardment (which causes material sputtering and redeposition) into a beneficial cleaning mechanism. By applying RF power with alternating polarity to the Faraday shield, ions are attracted to and bombard the shield surface, sputtering away redeposited material and preventing accumulation
2Reliability
If maintenance cleaning is performed frequently to remove redeposited material, then chamber cleanliness and process reliability are maintained, but production downtime and costs increase
Solution Approach 1:
The Faraday shield is designed to clean itself through the plasma processing operation. The alternating polarity RF power supply creates ion bombardment that continuously sputters away redeposited material from the shield surface, enabling self-cleaning during normal operation and eliminating the need for frequent manual maintenance
Solution Approach 2:
The cleaning action is made continuous rather than periodic. The RF power supply operates continuously during plasma processing, maintaining the Faraday shield in a clean state throughout production runs, thereby eliminating interruptions for maintenance cleaning
3Productivity
If conductive coating builds up on chamber walls over time, then material removal continues, but RF power attenuation increases and etch uniformity deteriorates
Solution Approach 1:
The Faraday shield acts as an intermediary barrier that prevents conductive material from reaching and coating the chamber walls. By capturing redeposited material on the shield surface instead, the shield protects the chamber walls from building up conductive coatings that would attenuate RF power and compromise etch uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Extends maintenance intervals, maintains substrate processing repeatability, and improves etch uniformity by effectively preventing redeposition and maintaining etch rate, reducing downtime and costs.
Implementation Method 1
a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing
Implementation Method 2
RF power from the coil antenna generates an inductively coupled plasma (ICP)
Implementation Method 3
The Faraday shield may comprise a plurality of apertures. The apertures may be vertically aligned slots... because a continuous horizontal band of metal deposited on the interior surface of the chamber causes eddy current losses
Implementation Method 4
The resultant ion bombardment etches the surface of the substrate
Data Source
AI summary
A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.

