Plasma Film Formation Feedback for High-Aspect-Ratio Recesses
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Solution Overview
Problem
In semiconductor manufacturing, particularly for 3D NAND structures, forming high aspect ratio patterns with high accuracy is challenging due to shape abnormalities like bowing, which occurs when deep holes are formed, and existing methods fail to effectively monitor and adjust plasma processing conditions in real-time to prevent such abnormalities.
Innovation Solution
A plasma processing method involving a plasma processing apparatus that generates plasma to form films on substrates with recesses, where the plasma state is monitored, and processing conditions are determined and adjusted based on this monitoring to ensure accurate film formation and prevent shape abnormalities, allowing for re-execution of the film formation process as needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If plasma processing is used to form films on high aspect ratio recesses, then film formation capability is improved, but shape abnormalities like bowing occur and manufacturing precision deteriorates
Solution Approach 1:
The patent implements real-time plasma state monitoring during film formation processes using optical emission spectroscopy to detect plasma parameters. Based on the monitored plasma state, the system automatically adjusts processing conditions and determines whether re-execution of the film formation process is necessary, creating a closed-loop feedback control system that prevents shape abnormalities while maintaining film formation capability
Solution Approach 2:
The patent changes plasma processing parameters based on monitored plasma state to optimize film formation. By adjusting parameters such as plasma power, gas flow rates, and pressure based on real-time plasma diagnostics, the system achieves accurate film deposition on high aspect ratio structures without causing bowing or other shape abnormalities
2Manufacturing precision
If film formation process is executed multiple times to improve accuracy, then manufacturing precision is improved, but processing time increases
Solution Approach 1:
The system uses real-time plasma state monitoring to determine the optimal termination point of the film formation process. By continuously measuring plasma parameters and comparing them against target values, the system can accurately control film thickness and quality in a single pass, eliminating the need for multiple trial runs and reducing total processing time
Solution Approach 2:
The patent performs preliminary determination of processing conditions based on initial plasma state monitoring. By predicting the required number of process cycles and optimizing parameters in advance, the system avoids unnecessary repeated processing while ensuring the required manufacturing precision is achieved
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables high-accuracy film formation without inspecting the pattern itself, allowing for precise determination of the film formation process's ending timing and stabilization of the plasma processing performance, thereby improving the formation of high aspect ratio patterns.
Implementation Method 1
In a process (b), plasma is generated in the processing container to form a film on the recess
Data Source
AI summary
A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.