Plasma Insulating Film Embedding for Recess Shape Control
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Solution Overview
Problem
Existing substrate processing methods struggle to achieve good embedding characteristics of insulating films in recesses on substrates, particularly in controlling the shape of the embedded film.
Innovation Solution
A substrate processing method involving the repeated formation of an adsorption layer on the substrate using a silicon-containing gas and subsequent plasma reaction with a reaction gas, followed by etching using an etching gas, with controlled plasma generation parameters to shape the embedded insulating film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional film formation and etching are repeated alternately, then insulating film embedding is achieved, but embedding characteristics and film shape control are insufficient
Solution Approach 1:
The patent applies parameter changes by controlling plasma generation parameters (power, frequency, gas flow rate, pressure) during the film formation process to precisely control the shape of the embedded insulating film. By adjusting these plasma parameters, the invention achieves good embedding characteristics without requiring complex process changes, resolving the contradiction between manufacturing precision and ease of manufacture.
2Manufacturing precision
If plasma generation parameters are controlled to shape the embedded film, then embedding characteristics improve, but process control complexity increases
Solution Approach 1:
The patent utilizes parameter changes by systematically adjusting plasma generation parameters (power, frequency, gas flow rate, pressure) to control film shape. This approach achieves precise embedding characteristics through controlled variations in physical parameters rather than through complex structural modifications, thereby improving film shape control while limiting the increase in device complexity.
3Manufacturing precision
If conventional etching is used, then insulating film is removed, but shape control of embedded film is poor
Solution Approach 1:
The patent applies parameter changes by controlling plasma generation parameters during film formation to indirectly control the shape of the embedded film after etching. By optimizing plasma parameters (power, frequency, gas flow, pressure) during deposition, the invention achieves good shape control of the embedded film while maintaining a relatively simple etching process, thus resolving the contradiction between manufacturing precision and ease of operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the achievement of good embedding characteristics by precisely controlling the shape of the embedded insulating film, resulting in improved film quality and process efficiency.
Implementation Method 1
forming an adsorption layer on the substrate by supplying a silicon-containing gas
Implementation Method 2
causing plasma of a reaction gas to react with the adsorption layer by generating the plasma of the reaction gas
Implementation Method 3
causing plasma of a reaction gas to react with the adsorption layer
Implementation Method 4
etching the first insulating film by generating plasma of an etching gas
Data Source
AI summary
A substrate processing method and a substrate processing device capable of obtaining good embedding characteristics are provided. The substrate processing method includes: embedding a first insulating film in a recess of a substrate by repeating forming an adsorption layer on the substrate by supplying a silicon-containing gas and causing plasma of a reaction gas to react with the adsorption layer by generating the plasma of the reaction gas; and etching the first insulating film by generating plasma of an etching gas, wherein a shape of the first insulating film embedded in the recess after etching is controlled by controlling plasma generation parameters in the causing the plasma to react with the adsorption layer.