Plasma Film Deposition for Pattern Spacing Thickness Control
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Solution Overview
Problem
Current plasma processing methods face challenges in achieving precise dimensional control of patterns on substrates, particularly in semiconductor device manufacturing, due to limitations in forming films with desired thickness differences across varying spacings between side walls, which can lead to defects and performance issues.
Innovation Solution
A plasma processing method involving a first film formed using chemical vapor deposition (CVD) with thickness variations based on pattern shapes, followed by atomic layer deposition (ALD) cycles, where the first film acts as an inhibitor, allowing for precise control of the second film's thickness through incubation and loading effects, enabling precise dimensional control of patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single film formation step is used, then the process is simple and fast, but the film thickness cannot be precisely controlled across different pattern spacings
Solution Approach 1:
The film formation process is divided into multiple sequential steps: first forming a reference film with uniform thickness, then forming a target film with thickness variations based on the reference film's thickness distribution. This segmentation allows precise control of the target film thickness by leveraging the reference film as a template, resolving the contradiction between precision and complexity.
Solution Approach 2:
The reference film is formed in advance before the target film formation. The reference film's thickness distribution, which varies according to the pattern spacing, serves as a preliminary structure that guides the subsequent target film formation. This preliminary action enables the target film to inherit the desired thickness variations without requiring direct complex control during its formation.
2Manufacturing precision
If film thickness is increased to ensure complete coverage, then coverage is improved, but dimensional precision of the pattern is reduced
Solution Approach 1:
The film formation process creates different film thicknesses at different locations based on the reference film thickness. Areas with thinner reference films receive less material deposition, while areas with thicker reference films receive more deposition. This local quality approach ensures complete coverage throughout the pattern while maintaining precise dimensional control, as each location receives the appropriate amount of material.
3Manufacturing precision
If conventional ALD is used for film formation, then conformal coverage is achieved, but selective thickness control across different spacings is not possible
Solution Approach 1:
The reference film acts as an intermediary between the deposition process and the final target film thickness control. By controlling the reference film thickness distribution first, the system creates a template that mediates the subsequent target film formation. This intermediary approach enables selective thickness control without requiring complex real-time adjustments during the target film deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of films with desired thickness differences, improving pattern precision and preventing defects by adjusting film thickness based on the state of the pattern, thereby enhancing the performance of semiconductor devices.
Implementation Method 1
a first step in which a plasma processing apparatus forms a first film on side walls of an opening in a processing target
Implementation Method 2
a second step after the first step in which the plasma processing apparatus performs a film forming cycle once or more times to form a second film
Data Source
AI summary
A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.