Atmospheric Plasma Fluorination Coating for Low-Particle Semiconductor Parts
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Solution Overview
Problem
Current methods for fluorinating components in semiconductor fabrication equipment are inefficient, leading to increased contaminant particles, high costs, and reduced productivity due to the need for vacuum chambers, hazardous chemicals, and expensive raw materials, while also failing to maintain optimal etch rates and coating reliability.
Innovation Solution
A processing method involving a mixed gas of He, Ne, Ar, Kr, O2, and CF4, excited into plasma at atmospheric pressure, to form a fluoride coating layer with a specific fluorine content, reducing contaminant particles and enhancing productivity by shortening the aging step and ensuring high-density, high-strength coatings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If low-pressure vacuum plasma is used for fluorination, then the surface of the component can be fluorinated, but the density of fluorine-containing radicals is low and the fluorination rate is low
Solution Approach 1:
The patent changes the pressure parameter from low-pressure vacuum to atmospheric pressure, and changes the gas composition parameter by using a mixed gas containing CF4 and O2. This results in high-density plasma with increased fluorine-containing radical density, thereby achieving both high fluorination quality and high fluorination rate simultaneously
2Manufacturing precision
If a fluoride layer is formed by conventional plasma methods, then the surface is fluorinated, but plasma contaminant particles are generated in large numbers
Solution Approach 1:
The patent optimizes the mixed gas composition ratio (CF4:O2 = 1:1 to 1:4) and atmospheric pressure parameters to achieve stable plasma discharge. This results in complete reaction of fluorine-containing radicals with the plasma-resistant coating surface, significantly reducing the generation of plasma contaminant particles while maintaining effective fluoride layer formation
3Manufacturing precision
If expensive raw materials like AlF3 or YF3 are used for coating, then a fluoride coating can be formed, but the price is very high and supply is limited
Solution Approach 1:
The patent enables the plasma-resistant coating material itself (Al2O3, Y2O3, etc.) to serve as the source of fluoride layer formation through in-situ reaction with fluorine-containing radicals from CF4 plasma. This eliminates the need for expensive external fluoride raw materials like AlF3 or YF3, achieving both high manufacturing precision and cost-effectiveness
4Reliability
If the aging step is performed repeatedly to create sufficient fluoride atmosphere, then normal etch rate can be achieved, but the operating time is greatly reduced and productivity decreases
Solution Approach 1:
The patent performs a preliminary high-density atmospheric pressure plasma fluorination treatment that creates a sufficient fluoride atmosphere in advance. This preliminary action with high fluorine-containing radical density achieves the required fluoride layer formation in a single or few treatments, eliminating the need for repeated aging steps and restoring full operating time for semiconductor fabrication
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces plasma contaminant particles, increases fluorination rate, and improves the reliability and cost-effectiveness of the fluoride coating process, ensuring normal etch rates and high-density coatings for large-area semiconductor equipment.
Implementation Method 1
a fourth step of generating plasma in the plasma reaction space by applying high-frequency power to the processing chamber, and forming a fluoride coating layer by fluorinating the surface of the fluorination-target component by the generated plasma and fluorine-containing radical gas
Implementation Method 2
generating plasma in the plasma reaction space by applying high-frequency power to the processing chamber
Implementation Method 3
forming a fluoride coating layer by fluorinating the surface of the fluorination-target component by the generated plasma and fluorine-containing radical gas, wherein the content of a fluorine (F) component in yttrium oxyfluoride (YOF) forming a surface layer of the fluoride coating layer
Data Source
AI summary
Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.